The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Lök, Ramazan; Kaya, Şenol; Karaçalı, H.; Yılmaz, Ercan

doi:10.1016/j.radphyschem.2017.06.019

Cited by 16 publications

(3 citation statements)

References 26 publications

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“…The low dose condition had a 103 krad (SiO 2 ) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and 278 rad/s high dose rate. As shown in Figure , compared to previously reported devices, − the V FB sensitivities of Zr 0.9 La 0.1 O y MOSCAPs are promising values for radiation-hardened applications, whereas the radiation-induced degradation on the dielectric layer and semiconductor layer of InO x /ZrLaO TFTs was investigated in separation. The demonstrated results indicate that solution-processed ZrLaO dielectrics have high potential for large-area electronics applied in harsh radiation environments.…”

Section: Introductionmentioning

confidence: 85%

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High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Fang

Zhao

Mitrović

et al. 2021

ACS Appl. Mater. Interfaces

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Radiation hardness is important for electronics operating in harsh radiation environments such as outer space and nuclear energy industries. In this work, radiation-hardened solution-processed ZrLaO thin films are demonstrated. The radiation effects on solution-processed ZrLaO thin films and InO x /ZrLaO thin-film transistors (TFTs) were systemically investigated. The Zr0.9La0.1O y thin films demonstrated excellent radiation hardness with negligible roughness, composition, electrical property, and bias-stress stability degradation after radiation exposure. The metal-oxide-semiconductor capacitors (MOSCAPs) based on Zr0.9La0.1O y gate dielectrics exhibited an ultralow flat band-voltage (V FB) sensitivity of 0.11 mV/krad and 0.19 mV/krad under low dose and high dose gamma irradiation conditions, respectively. The low dose condition had a 103 krad (SiO2) total dose and a 0.12 rad/s low dose rate, whereas the high dose condition had a 580 krad total dose and a 278 rad/s high dose rate. Furthermore, InO x /Zr0.9La0.1O y thin-film transistors (TFTs) exhibited a large I on/I off of 2 × 106, a small subthreshold swing (SS) of 0.11 V/dec, a small interface trap density (D it) of 1 × 1012 cm–2, and a 0.16 V threshold shift (ΔV TH) under 3600 s positive bias-stress (PBS). InO x /Zr0.9La0.1O y TFT-based resistor-loaded inverters demonstrated complete swing behavior, a static output gain of 13.3 under 4 V V DD, and an ∼9% radiation-induced degradation. Through separate investigation of the radiation-induced degradation on the semiconductor layer and dielectric layer of TFTs, it was found that radiation exposure mainly generated oxygen vacancies (Vo) and increased electron concentration among gate oxide. Nevertheless, the radiation-induced TFT instability was mainly related to the semiconductor layer degradation, which could be possibly suppressed by back-channel passivation. The demonstrated results indicate that solution-processed ZrLaO is a high-potential candidate for large-area electronics and circuits applied in harsh radiation environments. In addition, the detailed investigation of radiation-induced degradation on solution-processed high-k dielectrics in this work provided clear inspiration for developing novel flexible rad-hard dielectrics.

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Section: Introductionmentioning

confidence: 85%

“…Summarized flat-band voltage ( V FB ) sensitivity of high- k dielectrics under irradiation in recent years. − …”

Section: Introductionmentioning

confidence: 99%

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Fang

Zhao

Mitrović

et al. 2021

ACS Appl. Mater. Interfaces

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“…Researchers have suggested high-k dielectrics as a solution to this problem [1,2]. Developments in high-k MOS-based devices are also desired to be transferred to dosimeter technology so that RadFET radiation sensors can read doses lower than 10 mGy with high accuracy and become more resistant to high radiation field [3][4][5]. Many dielectrics such as rare earth and transition metal oxides have been considered as an alternative gate dielectric to SiO 2 [6][7][8] and intense research on the evaluation of electrical performance of the high-k MOSbased devices continues.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO₄/n-Si structures

Kahraman

Yılmaz

2021

Semicond. Sci. Technol.

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This study presents detailed results on the modifications in chemical composition, defective bonds, crystal properties based on x-ray photoelectron spectroscopy (XPS) depth profiles and x-ray diffraction of post-deposition annealed HfSiO4/Si structure. It also leads to a link to defect centers and their effect on the electrical characteristics of MOS capacitors. The HfSiO4 films were deposited on n-Si wafers by RF magnetron sputtering and annealed at room temperature (RT), 300 °C, 700 °C, 900 °C, 1100 °C under N2 ambient. That the atomic concentration values of each element in the oxide did not change significantly depending on the annealing temperature showed that the film was deposited with high homogeneity. It was determined that the shift direction of the binding energies of Hf 4f and O 1s XPS spectra were related to the bonding preference of oxygen rather than its concentration. The increase in Hf–M and Hf–Si oxygen defective bonds decreased the binding energy of the XPS spectra. It was determined from the XPS analyses of amorphous films that Hf–Si and Si–Si oxygen defective bonds may cause the positive charge trapping, resulting in the highest negative charge trapping/positive effective oxide charge density ( Q eff ) in the 300 °C-MOS capacitor. It was determined that Hf–Hf oxygen defective bonds may be the precursors of negative charge trapping. Interface states only contributed to the dielectric constant (k) in the RT-MOS capacitor. The Φ B (barrier height) values showed that the efficiency of acceptor-like and donor-like interface states changes depending on the frequency.

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Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

2020

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The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Cited by 16 publications

References 26 publications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO₄/n-Si structures

Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

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The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Cited by 16 publications

References 26 publications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures

Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices

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Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO₄/n-Si structures