The chemical oxidation of hydrogen-terminated silicon (111) surfaces in water studied <i>in situ</i> with Fourier transform infrared spectroscopy

Boonekamp, E. P.; Kelly, John J.; Ven, J. van de; Sondag, A.H.M.

doi:10.1063/1.356510

Cited by 53 publications

(44 citation statements)

References 28 publications

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“…Oxide can also be formed by dehydration of two adjacent Si-OH species (step 2f). 31,32,35 The surface will passivate if the oxide coverage becomes high. Oxide also dissolves in a chemical reaction and this gives rise to a small steady-state current.…”

Section: Discussionmentioning

confidence: 99%

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Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Philipsen

Kelly

2005

J. Phys. Chem. B

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The electrochemical oxidation and passivation of Si(100) and Si(111) electrodes in KOH solution was studied by potentiodynamic and potential-step measurements. Striking differences were observed between the surfaces. A comparison of the results for n-and p-type electrodes led us to conclude that electrochemical oxidation of silicon in alkaline solution must be triggered by a chemical reaction. The strong influence of temperature on the current-potential and current-time results of (111) surfaces supports the importance of chemical activation. Photocurrent experiments on n-type (111) electrodes show that oxide nucleation is important for growth of the passive layer. A mechanism combining surface chemistry and electrochemistry is proposed to account for the pronounced anisotropy in anodic oxidation.

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Section: Discussionmentioning

confidence: 99%

“…In addition, mechanical strain on the lattice as a result of oxygen incorporation will lead to destabilization of adjacent Si-Si bonds. 31,32 This effect should also accelerate oxidation and thus electron injection.…”

Section: Discussionmentioning

confidence: 99%

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Philipsen

Kelly

2005

J. Phys. Chem. B

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“…Table 1 compares values of surface roughness of n-Si(1 0 0) after etching in 2 and 6 M KOH showing that steady-state roughness is observed for all materials after approximately 1 h of etching. to the Si-H vibrations region [35][36][37][38][39]. These spectra are referenced to the OCP (E 1 = À1.59 V) and the results shown correspond to increasing positive potentials.…”

Section: Surface Morphologymentioning

confidence: 99%

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Haiss

Raisch

Bitsch

et al. 2006

Journal of Electroanalytical Chemistry

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The formation and growth of hydrogen bubbles on a Si(1 0 0) surface during its anisotropic etching in aqueous KOH has been investigated. Quantitative data on bubble size, lifetime and density on the etching surface was obtained and their dependence on KOH concentration, applied potential and temperature were measured. In situ FTIR measurements demonstrated a strong dependence of bubble attachment on surface termination and hence on the hydrophilicity of the Si(1 0 0) surface during etching. The formation of surface defects and the geometry of bubble imprints have been directly characterised with scanning probe microscopy. The analysis of hillock formation and statistical considerations show that the adhesion of hydrogen bubbles during anisotropic etching of silicon is a source of surface roughness and pyramid formation.

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“…The spray drying process requires that the silicon fuel and other constituents be slurried in water [3]. This creates a potential hazard situation as oxygen-containing water reacts dissociatively with silicon to form SiO 2 and hydrogen gas [4]. The overall reaction is:…”

Section: Introductionmentioning

confidence: 99%

Suppressing H₂Evolution by Silicon Powder Dispersions

Tichapondwa

Kaci

Fabbro

et al. 2011

Journal of Energetic Materials

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Silicon dispersions in water are used to produce pyrotechnic time delay compositions. The propensity of the silicon to react with water and to produce hazardous hydrogen gas must be suppressed. To this end the effect of surface modifications and medium pH on the rate of corrosion of silicon were studied at ambient temperature. It was found that the rate of hydrogen evolution increased with increasing pH. Silanes proved to be more effective silicon corrosion inhibitors than alcohols, with vinyl tris (2-methoxyethoxy) silane producing the best results. DTA studies were performed using a near-stoichiometric amount of lead chromate as oxidant. Comparable combustion behaviour was observed when both the fuel and the oxidant powders were either uncoated or silane modified. Mixtures of neat oxidant with silane coated silicon showed poor burn behaviour and this was attributed to poor particle-particle mixing owing to the mismatch in surface energies.

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The chemical oxidation of hydrogen-terminated silicon (111) surfaces in water studied in situ with Fourier transform infrared spectroscopy

Cited by 53 publications

References 28 publications

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Suppressing H₂Evolution by Silicon Powder Dispersions

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The chemical oxidation of hydrogen-terminated silicon (111) surfaces in water studied in situ with Fourier transform infrared spectroscopy

Cited by 53 publications

References 28 publications

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Anisotropy in the Anodic Oxidation of Silicon in KOH Solution

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Suppressing H2Evolution by Silicon Powder Dispersions

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Product

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Suppressing H₂Evolution by Silicon Powder Dispersions