The characteristics of reactive ion etching of polysilicon using SF6/O2 and their interdependence

Tandon, U. S.; Pant, B. D.

doi:10.1016/0042-207x(91)90120-8

Cited by 6 publications

(7 citation statements)

References 19 publications

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“…24,26,27 Applied electrode power increases the self-bias and the ion directionality and hence etching anisotropy. Pressure, for in- stance, increases the formation of atomic fluorine and other radicals, relative to that of ions, and, thus, promotes isotropic profiles.…”

Section: Resultsmentioning

confidence: 99%

“…All measurements graphed in Fig. 22 Thus, increases in applied electrode power during the etching cycle represent additional gas ionization, dissociation, 27 and, more importantly, additional ion bombardment energy which is reflected in higher etch rates (see Fig. 25 The etching rate of silicon has three components: physical sputtering, spontaneous thermal etching, and ion-enhanced chemical reaction; the largest component being the ion-enhanced part.…”

Section: Resultsmentioning

confidence: 99%

“…It also reduces the maximum ion energy, the sheath width, and the bias drop across the electrode sheath. 24,26,27 Applied electrode power increases the self-bias and the ion directionality and hence etching anisotropy. Ion bombardment energy increases typically increase the etching rate of the photoresist relative to that of silicon, thereby decreasing the selectivity.…”

Section: Resultsmentioning

confidence: 99%

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Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher

Ayón

Braff

Lin

et al. 1999

J. Electrochem. Soc.

374

181

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We report the experimentally obtained response surfaces of silicon etching rate, aspect ratio dependent etching (ARDE), photoresist etching rate, and anisotropy parameter in a time multiplexed inductively coupled plasma etcher. The data were collected while varying eight etching variables. The relevance of electrode power, pressure, and gas flow rates is presented and has been found to agree with observations reported in the literature. The observed behavior presented in this report serves as a tool to locate and optimize operating conditions to etch high aspect ratio structures. The performance of this deep reactive ion etcher allows the tailoring of silicon etching rates in excess of 4 m/min with anisotropic profiles, nonuniformities of less than 4% across the wafer, and ARDE control with a depth variation of less than 1 m for trenches of dissimilar width. Furthermore it is possible to prescribe the slope of etched trenches from positive to reentrant.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher

Ayón

Braff

Lin

et al. 1999

J. Electrochem. Soc.

374

181

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“…When Si is etched, SiF, is the only stable silicon-containing etch product and SOF2 is formed in oxygen-poor mixtures. The decrease of the reaction probability is found to be P [8] •'= 1 + Cno/n~ where ~' is the reaction probability in the presence of oxygen, no is the density of oxygen atoms, and C is a constant. As the feed is made more 02 rich, SO2F2 increases with respect to SOF 4 while the F-atom concentration first increases, reaches a maximum, and then decreases.…”

Section: Resultsmentioning

confidence: 99%

Anisotropic Reactive Ion Etching of Silicon Using SF 6 / O 2 / CHF 3 Gas Mixtures

Legtenberg

Jansen

Boer

et al. 1995

J. Electrochem. Soc.

145

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Reactive ion etching of silicon in an RF parallel plate system, using SF6/O2/CHF3, plasmas has been studied. Etching behavior was found to be a function of loading, the cathode material, and the mask material. Good results with respect to reproducibility and uniformity have been obtained by using silicon as the cathode material and silicon dioxide as the masking material for mask designs where most of the surface is etched. Etch rate, selectivity, anisotropy, and self-bias voltage have been examined as a function of SF6 flow, 02 flow, CHF3 flow, pressure, and the RF power, using response surface methodology, in order to optimize anisotropic etching conditions. The effects of the variables on the measured responses are discussed. The anisotropic etch mechanism is based on ion-enhanced inhibitor etching. SF6 provides the reactive neutral etching species, 02 supplies the inhibitor film forming species, and SF6 and CHF3 generate ion species that suppress the formation of the inhibitor film at horizontal surfaces. Anisotropic etching of high aspect ratio structures with smooth etch surfaces has been achieved. The technique is applied to the fabrication of three-dimensional micromechanieal structures.

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“…The work presented in this paper extends the use of the scaling effect to produce fibre groove profiles of similar shape in silicon while maintaining the anisotropy and depth of the profiles for different mask widths and aspect ratios. Using a similar approach to [9], the effect of variation in each single process parameter on the etch characteristics is measured individually, to choose a set of optimal process parameters. The RF power density, inter-electrode distance and total flow rate of reactive species were held constant and the effect of gas pressure on the etch rate, etch profile and DC self-bias were measured.…”

Section: Introductionmentioning

confidence: 99%