The Characteristics of PV module under the Partial Shading Condition and with a Failure of Bypass Diode with Short

Suk-Whan, Ko; Ju, Young-Chul; So, Jung-Hun; Hwang, Hye-Mi; Jung, Youngseok; Kang, Gi‐Hwan

doi:10.7836/kses.2016.36.4.041

Cited by 6 publications

(2 citation statements)

References 1 publication

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“…From the measured temperature data, it was confirmed that the temperature inside the junction box of the PV module operating normally was distributed in the range of 38 to 72 • C based on the maximum value. It can be assumed that the temperature inside the junction box was higher than when shading occurred, during which the bypass diode conducts forward voltage, or the bypass diode fails [30]. Moreover, the inside of the junction box was exposed to temperatures of over 60 • C for more than 90 h in high ambient temperature (June to September), which may have caused problems to the bypass diode.…”

Section: Temperature In the Junction Box Of A C-si Pv Module Installementioning

confidence: 99%

Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature

Shin

Song

et al. 2018

Energies

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Bypass diodes have been widely utilized in crystalline silicon (c-Si) photovoltaic (PV) modules to maximize the output of a PV module array under partially shaded conditions. A Schottky diode is used as the bypass diode in c-Si PV modules due to its low operating voltage. In this work, we systematically investigated the origin of bypass diode faults in c-Si PV modules operated outdoors. The temperature of the inner junction box where the bypass diode is installed increases as the ambient temperature increases. Its temperature rises to over 70 °C on sunny days in summer. As the temperature of the junction box increases from 25 to 70 °C, the leakage current increases up to 35 times under a reverse voltage of 15 V. As a result of the high leakage current of the bypass diode at high temperature, melt down of the junction barrier between the metal and semiconductor has been observed in damaged diodes collected from abnormally functioning PV modules. Thus, it is believed that the constant leakage current applied to the junction caused the melting of the junction, thereby resulting in a failure of both the bypass diode and the c-Si PV module.

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Section: Temperature In the Junction Box Of A C-si Pv Module Installementioning

confidence: 99%

Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature

Shin

Song

et al. 2018

Energies

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“…The failure of the bypass diodes causes them to lose their reverse characteristics, so when a forward voltage is applied to the PV module (bypass diodes in a reverse state), current can flow into the failure of the bypass diode. At the same time, the solar cells connected to the fault bypass diode constitute a short-circuit condition, and their generated voltage is about 0 V, which reduces the overall voltage of the PV module [21]. The experimental results show that, if all of the bypass diodes in the PV module fail, the open-circuit voltage is reduced by up to 90%, so the reverse current will likely flow into PV modules with the failure of the bypass diode.…”

Section: The Failure Of Bypass Diodesmentioning

confidence: 99%

Current Flow Analysis of PV Arrays under Voltage Mismatch Conditions and an Inverter Failure

et al. 2019

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In PV (Photovoltaic) systems, the PV array is a structure in which many PV strings are connected in parallel. The voltage mismatch between PV strings, in which PV modules are connected in a series, occurs due to a voltage decrease in some modules. In this paper, research on the electrical characteristics of PV arrays due to a voltage mismatch was conducted. Considering the voltage mismatch, experiments on partial shading, the non-uniformity of irradiance, and the failure of bypass diodes were conducted on the PV module level. It was confirmed that the open-circuit voltage greatly decreased due to the failure of bypass diodes, which is among the causes of voltage mismatch. From the simulation results at the PV array level, it can be seen that a reverse current flowed into the low-potential string, which includes PV modules, causing the failure of the bypass diodes. Measuring the reverse current at one low-potential string, it was found that, in four parallel circuits, the reverse current was 12 A. For this reason, in large PV plants, an overcurrent can flow into the fuse due to the potential difference between strings, causing an output decrease of PV plants and the burnout of fuses.

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Analysis of electrical and thermal characteristics of PV array under mismatching conditions caused by partial shading and short circuit failure of bypass diodes

Lee

Shin

Lim

et al. 2021

Energy

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The Characteristics of PV module under the Partial Shading Condition and with a Failure of Bypass Diode with Short

Cited by 6 publications

References 1 publication

Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature

Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature

Current Flow Analysis of PV Arrays under Voltage Mismatch Conditions and an Inverter Failure

Analysis of electrical and thermal characteristics of PV array under mismatching conditions caused by partial shading and short circuit failure of bypass diodes

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