2011
DOI: 10.1016/j.jphotochem.2011.01.010
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The characterisation of aerosol assisted CVD conducting, photocatalytic indium doped zinc oxide films

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Cited by 40 publications
(20 citation statements)
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“…As such, a popular choice for AACVD precursor selection is an inorganic or organic salt of the desired element such as indium chloride or zinc acetate (in the case of ZnO:In films), 14 which is often cheap, readily available and usually comes with fewer significant associated physical hazards compared to its volatile liquid counterpart. In addition to this, AACVD permits 'one-pot' depositions, where precursors with similar solubility can be dissolved in a common solvent and deposited together from a single precursor flask.…”
mentioning
confidence: 99%
“…As such, a popular choice for AACVD precursor selection is an inorganic or organic salt of the desired element such as indium chloride or zinc acetate (in the case of ZnO:In films), 14 which is often cheap, readily available and usually comes with fewer significant associated physical hazards compared to its volatile liquid counterpart. In addition to this, AACVD permits 'one-pot' depositions, where precursors with similar solubility can be dissolved in a common solvent and deposited together from a single precursor flask.…”
mentioning
confidence: 99%
“…Transparent conducting oxide (TCO) films using doped forms of ZnO, SnO 2 , In 2 O 3 and so on are extensively used for solar cells and flat display devices. Various deposition techniques like sputtering , pulsed laser deposition , chemical vapor deposition , molecular beam epitaxy , hydrothermal reaction , sol–gel , electrochemical deposition , and spray pyrolysis have been used for deposition of TCO coatings. In comparison with other deposition techniques, spray technique offers several advantages like high deposition rate, excellent control of overall stoichiometry, high deposition efficiency, and easy coverage over large area .…”
Section: Introductionmentioning
confidence: 99%
“…For example, the resistivity of ZnO can be adjusted from 10 11 to 10 À 3 Ω-cm, depending on the impurity selection and post-annealing conditions [11,12]. In the past, elements such as In [13], Ga [14], Al [15] and Cu [16] have been added into ZnO to increase its n-type conduction behavior. Among the noteworthy dopants, Cu is of great interest due to the production of diluted semiconductor [17][18][19].…”
Section: Introductionmentioning
confidence: 99%