The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO2

Yıldız, Abdullah; Alsaç, Aysun Arslan; Seri̇n, Tülay; Serin, N.

doi:10.1007/s10854-010-0228-2

Cited by 9 publications

(3 citation statements)

References 13 publications

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“…The results indicate that the deposited n-SnO 2 layers exhibit four diffraction peaks located at 26.8, 34.15, 38.1, and 52.1, showing that the layers are polycrystalline in nature. [14] The increase in intensity of peaks reveals the improvement in the crystalline quality of the investigated layers.…”

Section: Resultsmentioning

confidence: 90%

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Özel

Yıldız

2021

Physica Rapid Research Ltrs

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The development of high‐performance, self‐powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self‐powered PDs based on the p–n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO2 layer into the n‐SnO2/p‐Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W−1, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 × 1013 Jones at −5 V for 311 nm. Notably, the PDs possess self‐powered characteristics with an extremely high photoresponsivity of 208 mA W−1 and detectivity of 1.17 × 1012 Jones toward 311 nm without any power supply, suggesting their high potential for future energy‐efficient, self‐powered, high‐performance UV‐detecting application.

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Section: Resultsmentioning

confidence: 90%

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Özel

Yıldız

2021

Physica Rapid Research Ltrs

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“…The Nearest-Neighbor Hopping conduction (NNH) becomes the main conduction mechanism. The resistivity of NNH is given by [6,7]…”

Section: Resultsmentioning

confidence: 99%

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Gaewdang

Wongcharoen

2018

KEM

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In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

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“…The aforementioned MO x /Si HPDs offer a reasonable solution for the detection of UV-B radiation. Among MO x semiconductors, SnO 2 thin films can assure an attractive approach for UV-B detection thanks to the following characteristics, including (a) wide band gap of 3.5-4 eV (the absorption edge at around 310-354 nm, incorporating the UV-A and UV-B regimes), (b) high chemical and radiation stability, (c) low growth temperature [18][19][20][21][22][23]. In a n-SnO 2 /p-Si HPD, UV spectrum (λ < λ g , where λ g , is wavelength corresponding to band gap energy) is directly absorbed by SnO 2 emitter layer, while the remaining spectrum can pass through the SnO 2 layer and reach the Si layer.…”

Section: Introductionmentioning

confidence: 99%

High-detectivity ultraviolet-B photodetector based on SnO₂ thin film/Si heterojunction

Özel

Yıldız

2021

Semicond. Sci. Technol.

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Composed of a metal oxide (MO x ) material-based emitter layer, p-n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO 2 thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 × 10 13 Jones, pronounced responsivity of 2.16 A W −1 and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.

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The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO2

Cited by 9 publications

References 13 publications

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

High-detectivity ultraviolet-B photodetector based on SnO₂ thin film/Si heterojunction

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The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO2

Cited by 9 publications

References 13 publications

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W−1) based on SnO2 Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W−1) based on SnO2 Nanostructures/Si Heterojunctions

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction

Contact Info

Product

Resources

About

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

A Self‐Powered Ultraviolet Photodetector with Ultrahigh Photoresponsivity (208 mA W⁻¹) based on SnO₂ Nanostructures/Si Heterojunctions

High-detectivity ultraviolet-B photodetector based on SnO₂ thin film/Si heterojunction