2010
DOI: 10.1063/1.3285431
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The challenge of unity wall plug efficiency: The effects of internal heating on the efficiency of light emitting diodes

Abstract: We develop a self-consistent model to describe the internal heating of high power light emitting diodes (LEDs) and use this model to simulate the operation of GaAs–AlGaAs double heterostructure LEDs. We account for the heating by nonradiative recombination processes in the simulations and solve self-consistently the steady state junction temperature. Based on the simulation results, we discuss the plausibility of unity conversion efficiency in LEDs and also the mechanisms underlying the efficiency droop. We sh… Show more

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Cited by 28 publications
(25 citation statements)
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“…͑In fact, only recently has the contribution of Auger recombination in common GaAs-AlGaAs light emitting diodes been evaluated at current densities comparable to those generated in concentrator PVs. 12 ͒ Analytic and simulation modeling of the effects of Auger recombination on Ge solar cell performance were conducted for a wide range of doping levels, and up to ultrahigh optical concentration. Degradation of cell performance was found to be insignificant up to irradiance levels of thousands of suns.…”
Section: Is Auger Recombination the Ultimate Performance Limiter In Cmentioning
confidence: 99%
“…͑In fact, only recently has the contribution of Auger recombination in common GaAs-AlGaAs light emitting diodes been evaluated at current densities comparable to those generated in concentrator PVs. 12 ͒ Analytic and simulation modeling of the effects of Auger recombination on Ge solar cell performance were conducted for a wide range of doping levels, and up to ultrahigh optical concentration. Degradation of cell performance was found to be insignificant up to irradiance levels of thousands of suns.…”
Section: Is Auger Recombination the Ultimate Performance Limiter In Cmentioning
confidence: 99%
“…The photon recycling is accounted for representing the coefficient B as ðq esc þ q abs ÞB 0 , where q esc is the photon escape probability, q abs is the probability for the photons to be absorbed outside the active region, and B 0 is the radiative recombination coefficient when no photon confinement or photon recycling takes place (i.e., when q esc þ q abs ¼ 1). 14 The total built-in polarization P tot of III-Nitrides is induced by the asymmetry of the wurtzite crystal structure (spontaneous polarization) and the strain of the crystal close to the material interfaces (piezoelectric polarization).…”
Section: Theorymentioning
confidence: 99%
“…This factor corresponds to 1 minus the photon recycling factor, photon escape probability (from the AR), or, if optical losses outside of the AR can be neglected, to the light extraction efficiency. 19,24 Recombination rate densities are integrated over the volume of the whole LED to obtain the total recombination rate of the whole device, since radiative recombination in the transparent region is negligible. Fig.…”
mentioning
confidence: 99%