Polarization doping and the efficiency of III-nitride optoelectronic devices

Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka

doi:10.1063/1.4833155

Cited by 19 publications

(17 citation statements)

References 28 publications

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“…[2][3][4][5][6][7][8][9][10][11][12] Most simulation models for current transport in III-N LEDs assume that the carriers follow quasi-equilibrium distributions. [13][14][15][16] However, recent experimental works have indicated a strong correlation between the efficiency droop and hot carriers that cannot be modeled with quasi-equilibrium models. [17][18][19] To provide the necessary tools for theoretical device-level studies of this correlation, we have recently developed a Monte Carlo-drift-diffusion (MCDD) simulation model.…”

Section: Introductionmentioning

confidence: 97%

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

et al. 2015

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Recent measurements have generated a need to better understand the physics of hot carriers in III-Nitride (III-N) lightemitting diodes (LEDs) and in particular their relation to the efficiency droop and current transport. In this article we present fully self-consistent bipolar Monte Carlo (MC) simulations of carrier transport for detailed modeling of charge transport in III-N LEDs. The simulations are performed for a prototype LED structure to study the effects of hot holes and to compare predictions given by the bipolar MC model, the previously introduced hybrid Monte Carlo-drift-diffusion (MCDD) model, and the conventional drift-diffusion (DD) model. The predictions given by the bipolar MC model and the MCDD model are observed to be almost equivalent for the studied LED. Therefore our simulations suggest that hot holes do not significantly contribute to the basic operation of multi-quantum well LEDs, at least within the presently simulated range of material parameters. With the added hole transport simulation capabilities and fully self-constistent simulations, the bipolar Monte Carlo model provides a state-of-the-art tool to study the fine details of electron and hole dynamics in realistic LED structures. Further analysis of the results for a variety of LED structures will therefore be very useful in studying and optimizing the efficiency and current transport in next-generation LEDs.

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Section: Introductionmentioning

confidence: 97%

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

et al. 2015

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“…Majority of LED device simulations deploy the drift-diffusion (DD) model, that can also be extended for special effects such as quantum-confined Stark effect or random alloy fluctuations [12][13][14][15]. Quasi-equilibrium carrier distributions are assumed in the DD model, and hot carrier effects can be included only phenomenologically [5,6].…”

Section: Theorymentioning

confidence: 99%

Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

et al. 2016

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Hot carrier effects have been observed in recent measurements of IIINitride (III-N) light-emitting diodes (LEDs). In this paper we carry out bipolar Monte Carlo (MC) simulations for electrons and holes in a typical III-N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5k B T corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

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“…Most of the device models used for III-N LEDs today are based on the drift-diffusion (DD) model, in which electrons and holes are modeled by quasi-equilibrium distributions [3], [4]. The DD model is very useful in interpreting the device level characteristics of LEDs but is inherently based on quasi equilibrium carrier distributions.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Kivisaari

Sadi

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Abstract-We carry out bipolar Monte Carlo (MC) simula tions of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recom bination and intraband scattering processes and solves self consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.

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Polarization doping and the efficiency of III-nitride optoelectronic devices

Cited by 19 publications

References 28 publications

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

Bipolar Monte Carlo simulation of electrons and holes in III-N LEDs

Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

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