The case for a 40% efficiency goal for photovoltaic cells in 2005

Rannels, James E.

doi:10.1016/s0927-0248(00)00071-4

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…In the multijunction cell, multiple absorbing layers of materials with different band gaps are arranged so that the band gap decreases layer by layer to maximize the photon absorption, [149,150] but the technology increases the cost of manufacturing and implementation. Another potential approach is to take advantage of the generation of multiple electron-holes (excitons) by one excitation event (MEG).…”

Section: Photoelectrochemical Solar Cellsmentioning

confidence: 99%

Oriented Nanostructures for Energy Conversion and Storage

et al. 2008

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Recently, the role of nanostructured materials in addressing the challenges in energy and natural resources has attracted wide attention. In particular, oriented nanostructures demonstrate promising properties for energy harvesting, conversion, and storage. In this Review, we highlight the synthesis and application of oriented nanostructures in a few key areas of energy technologies, namely photovoltaics, batteries, supercapacitors, and thermoelectrics. Although the applications differ from field to field, a common fundamental challenge is to improve the generation and transport of electrons and ions. We highlight the role of high surface area to maximize the surface activity and discuss the importance of optimum dimension and architecture, controlled pore channels, and alignment of the nanocrystalline phase to optimize the transport of electrons and ions. Finally, we discuss the challenges in attaining integrated architectures to achieve the desired performance. Brief background information is provided for the relevant technologies, but the emphasis is focused mainly on the nanoscale effects of mostly inorganic-based materials and devices.

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Section: Photoelectrochemical Solar Cellsmentioning

confidence: 99%

Oriented Nanostructures for Energy Conversion and Storage

et al. 2008

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“…[11][12][13][14][15][16][17] During the past 4 years Japan, Germany and USA have emerged as leaders in the total kWp installed, sharing together about 90% of the world market. Globally, in 2003 about 753 MWp PV systems were installed, and the 1 GWp barrier was exceeded in 2004.…”

Section: Towards a New World-energy Scenariomentioning

confidence: 99%

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Bosi

Pelosi

2006

Progress in Photovoltaics

175

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III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III-V technology from space to Earth

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“…Technical advances in polycrystalline thin film technology have demonstrated photovoltaic devices with measured efficiencies greater than 18%(total area) [1,2], employing the coevaporation of Cu, In, Ga, and Se elements through a three-stage process. However, evaporation of element sources requires high temperature for evaporation.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of CuInSe₂ Solar Cells by the Evaporation of Binary Selenide Compounds

et al. 2001

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CuInSe 2 films were prepared by the three-stage process using the evaporation of In 2 Se 3 , Cu 2 Se and Se. In the third stage, the depth of Cu-poor surface region was precisely adjusted by the control of the evaporation rate of In 2 Se 3 and Se. The interface between Cu-poor surface region and stoichiometric CuInSe 2 film was characterized using AES, microEDAX, and RBS. The 9.59% efficiency was achieved in the 0.16 cm 2 area cell. The efficiency is the same level of the CIS cell prepared using the element coevaporation, opening up the application of binary compounds for highly efficient Cu(In,Ga)Se 2 cells.

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The case for a 40% efficiency goal for photovoltaic cells in 2005

Cited by 5 publications

References 3 publications

Oriented Nanostructures for Energy Conversion and Storage

Oriented Nanostructures for Energy Conversion and Storage

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Fabrication of CuInSe₂ Solar Cells by the Evaporation of Binary Selenide Compounds

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The case for a 40% efficiency goal for photovoltaic cells in 2005

Cited by 5 publications

References 3 publications

Oriented Nanostructures for Energy Conversion and Storage

Oriented Nanostructures for Energy Conversion and Storage

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Fabrication of CuInSe2 Solar Cells by the Evaporation of Binary Selenide Compounds

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Product

Resources

About

Fabrication of CuInSe₂ Solar Cells by the Evaporation of Binary Selenide Compounds