Fabrication of CuInSe₂ Solar Cells by the Evaporation of Binary Selenide Compounds

Abstract

CuInSe 2 films were prepared by the three-stage process using the evaporation of In 2 Se 3 , Cu 2 Se and Se. In the third stage, the depth of Cu-poor surface region was precisely adjusted by the control of the evaporation rate of In 2 Se 3 and Se. The interface between Cu-poor surface region and stoichiometric CuInSe 2 film was characterized using AES, microEDAX, and RBS. The 9.59% efficiency was achieved in the 0.16 cm 2 area cell. The efficiency is the same level of the CIS cell prepared using the element coevaporation, opening up the application of binary compounds for highly efficient Cu(In,Ga)Se 2 cells.