The C−Si (Carbon-Silicon) system

Olesinski, R. W.; Abbaschian, G. J.

doi:10.1007/bf02872902

Cited by 155 publications

(65 citation statements)

References 17 publications

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“…For C sub =C total Յ 1.97% the deposited 10 nm layer thickness is close to an expected t crit . Since no misfit dislocations associated with the strain relaxation are observed here or elsewhere, [3][4][5][6][7] the observed transformation of substitutional carbon atoms into interstitials during layer deposition seems to be the mechanism for strain relaxation. These interstitials can further precipitate in the form of three-dimensional ͑3D͒ pyramidal defects ͑Fig.…”

Section: ͑1͒mentioning

confidence: 53%

“…2 For a Si 1−y C y alloy with carbon atoms incorporated substitutionally, the lattice parameter is reduced with respect to silicon. However, due to the extremely low solid solubility of C in Si under equilibrium conditions, 3 the incorporation of C atoms into substitutional sites is nontrivial and can only be obtained by using far from equilibrium growth conditions. [4][5][6][7] So far, substitutional carbon compositions C sub of a maximum of about 1% have been obtained within typical 100-nm-thick s-Si:C layers grown by different techniques and these are for total carbon concentrations which usually double.…”

mentioning

confidence: 99%

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On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Cherkashin

Hÿtch

Houdellier

et al. 2009

Applied Physics Letters

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International audienceMeasurements of strain and composition are reported in tensile strained 10- and 30-nm-thick Si:C layers grown by chemical vapor deposition on a Si (001) substrate. Total carbon concentration varies from 0.62% to 1.97%. Strain measurements were realized by high-resolution x-ray diffraction, convergent-beam electron diffraction, and geometric phase analysis of high-resolution transmission electron microscopy cross-sectional images. Raman spectroscopy was used for the deduction of the substitutional concentration. We demonstrate that in addition to the growth conditions, strain accumulating during deposition, thus depending on a layer thickness, has an influence on the final substitutional carbon composition within a strained Si:C laye

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Section: ͑1͒mentioning

confidence: 53%

mentioning

confidence: 99%

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Cherkashin

Hÿtch

Houdellier

et al. 2009

Applied Physics Letters

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“…As was pointed out by Olesinski and Abbaschian, 14) this silicon carbide layer would have functioned as a growth substrate for diffusing carbon during quenching. As this layer was removed before carbon analysis, the carbon content may have been underestimated.…”

Section: Temperature Dependencymentioning

confidence: 87%

Time and Temperature Dependence of the Solubility of Carbon in Liquid Silicon Equilibrated with Silicon Carbide and Its Dependence on Boron Levels

Dalaker

Tangstad

2009

Mater. Trans.

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The solubility of carbon in liquid silicon equilibrated with silicon carbide has been studied in the temperature region 1414-1559 C. High purity silicon was melted in graphite crucibles under Ar atmosphere with various boron additions. The equilibrium was observed to be established within minutes, after which no evolution with time could be observed. The addition of boron to the system was found to increase the carbon solubility, and an equation was derived describing the solubility as a function of both temperature and boron content. The solubility of carbon in pure liquid silicon was determined to be 65 ppm mass at the melting point of silicon. Expressions for the dissolution energy of carbon and the B-C interaction coefficient were also derived.

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“…The specimen size sharply decreased at 2570 K because the melted specimen was extruded from the mold. Therefore, the eutectic temperature of ZrB 2 -SiC should be 2570 K, significantly lower than the melting points of ZrB 2 (3520 K 1) ) and SiC (2818 K, 24) decomposition temperature). Ordan'yan et al reported the eutectic temperature to be 254330 K by using a pyrometer.…”

Section: Methodsmentioning

confidence: 95%

Preparation of ZrB2-SiC composites by arc melting and their properties

Hirayama

Goto

2008

J. Ceram. Soc. Japan

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ZrB 2 -SiC composites were prepared by arc melting using ZrB 2 and b-SiC powders as raw materials and their Vickers microhardness, electrical conductivity and thermal conductivity were investigated. The eutectic composition of the ZrB 2 -SiC system was ZrB 2 -58.5 molSiC with a labyrinthine microstructure 100 nm in width and several mm in length. The hardness of the ZrB 2 -SiC composites increased with increasing SiC content and showed the highest value of 24 GPa at an indenter load of 4.9 N around the eutectic composition. The ZrB 2 -SiC eutectic composite had the highest fracture hardness of 6 MPa m 1/2 . The electrical conductivity of ZrB 2 -SiC composites ranged from 3.2×10 4 to 5.0×10 6 S m -1 at room temperature and decreased with increasing temperature. Their thermal conductivity at room temperature was 70 to 95 W m -1 K -1 and decreased with increasing temperature. The eutectic composite had the lowest thermal conductivity.

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The C−Si (Carbon-Silicon) system

Cited by 155 publications

References 17 publications

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Time and Temperature Dependence of the Solubility of Carbon in Liquid Silicon Equilibrated with Silicon Carbide and Its Dependence on Boron Levels

Preparation of ZrB2-SiC composites by arc melting and their properties

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