2001
DOI: 10.1016/s0026-2692(01)00039-8
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The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source

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Cited by 83 publications
(50 citation statements)
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“…In the discussion of the evolution of the Black Silicon structures, we will rely on the extensive studies of SF 6 -O 2 etching process by Dussart and co-workers 15,[24][25][26] as well as the pioneering work of Jansen, de Boer and co-workers who first described the Black Silicon process. 14,27 Generally two reactions occur in the presence of the SF 6 -O 2 plasma. First, fluorine radicals F* etch the silicon surface chemically under the formation of volatile SiF 4…”
Section: A Structure Evolution During Etchingmentioning
confidence: 99%
See 1 more Smart Citation
“…In the discussion of the evolution of the Black Silicon structures, we will rely on the extensive studies of SF 6 -O 2 etching process by Dussart and co-workers 15,[24][25][26] as well as the pioneering work of Jansen, de Boer and co-workers who first described the Black Silicon process. 14,27 Generally two reactions occur in the presence of the SF 6 -O 2 plasma. First, fluorine radicals F* etch the silicon surface chemically under the formation of volatile SiF 4…”
Section: A Structure Evolution During Etchingmentioning
confidence: 99%
“…Increasing the oxygen flow over a certain threshold leads to a stronger passivation that also inhibits the etching on horizontal faces and causes a sharp drop of the etch rate. 25,27 This so-called overpassivating regime leads to the formation of Black Silicon structures. 15 Apparently, in the initial stage of structure formation, the substrate roughness is strongly increased (compare images after 0 min and 0.5 min in Figure 1).…”
Section: A Structure Evolution During Etchingmentioning
confidence: 99%
“…In the etching process, the ratio of O 2 and SF 6 is critical since they are used to produce a SiO x F y passivation layer on silicon substrate. [47][48][49][50] When the flow rate of O 2 increases, the anisotropic etching prevails because of greater protection from thick SiO x F y passivation layer and the microstructures with vertical sidewall are obtained. On the other hand, the isotropic etching effect dominates when O 2 flow rate decreases.…”
Section: A Sem Images Of a Silicon Microneedles Arraymentioning
confidence: 99%
“…Subsequently, the silicon underneath the membrane layer ͑2͒ is anisotropically etched 14,15 with an SF 6 /O 2 plasma at 100 mTorr and 100 W for 10 min with an etch rate of 2 m / min to form the macroscopic openings in the support ͑1͒. Figure 5 shows a SEM photograph of the resulting perforated membrane layer ͑2͒ showing a very regular pore pattern, the pore size being 260 nm with a pore-to-pore spacing of 510 nm.…”
Section: Device Fabrication With Short Exposure Timementioning
confidence: 99%