The B11 (p, α) Be8 reaction and C12 states between 15 and 20 MeV

Symons, G.D.; Treacy, P.B.

doi:10.1016/0029-5582(63)90567-4

Cited by 54 publications

(12 citation statements)

References 11 publications

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“…5 together with the coefficients obtained by Refs. [6,7,12]. In addition, the position of the natural parity states, listed in the latest compilation [18], are also indicated.…”

Section: Resultsmentioning

confidence: 99%

“…With the present agreement with previous datasets, we are unable to discern between the two differing interpretations presented in Refs. [8,6,7] for the region below 2 MeV. The reader is thus referred to them for a detailed discussion of the angular coefficients.…”

Section: Resultsmentioning

confidence: 99%

“…As discussed in the introduction, there are several normalization issues between the different datasets [9,6,7,10,11,12]. In order to shed light on this, the ratios between the cross sections of other datasets and the present have been computed.…”

Section: Resultsmentioning

confidence: 99%

“…Finally, the cross section of the 11 B(p, 3α) reaction provides a direct probe for resonances in 12 C above the 11 11,16.62 and 17.76 MeV, which have spin and parity of 2 + , 2 − and 0 + and whose properties are well established. Additionally, a very broad 1 − , T = 1 resonance and sub-threshold resonances of unknown spin and parity are believed to contribute to the excitation spectrum in the region between the 2 − and 0 + resonances [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

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Resolving the $${}^{11}\hbox {B}{(p,\alpha _{0})}$$ cross-section discrepancies between 0.5 and 3.5 MeV

et al. 2020

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The reaction 11 B(p, 3α) is relevant for fields as diverse as material science, nuclear structure, nuclear astrophysics, and fusion science. However, for the channel proceeding via the ground state of 8 Be, the available cross-section data shows large discrepancies of both normalization and energy scale. The present paper reports on a measurement of the 11 B(p, α0) cross section using an array of modern large area segmented silicon detectors and low beam current on an enriched thin target with the aim of resolving the discrepancies amongst previous measurements.PACS. PACS-key discribing text of that key -PACS-key discribing text of that key

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“…5 together with the coefficients obtained by Refs. [6,7,12]. In addition, the position of the natural parity states, listed in the latest compilation [18], are also indicated.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Resolving the $${}^{11}\hbox {B}{(p,\alpha _{0})}$$ cross-section discrepancies between 0.5 and 3.5 MeV

et al. 2020

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“…To get some information on the lattice location of the implanted boron atoms we carried out some nuclear reaction experiments [18]. Using a 1.3 MeV cham1 numterproton beam the nuclear reaction Bll(p, a)Bes can be initiated and u-particles with energies greater than 2 MeV will be emitted.…”

Section: Boronmentioning

confidence: 99%

Ion-implanted Ge transistor: Basic experiments

Schmid

Kranz

Ryssel

et al. 1974

Phys. Stat. Sol. (a)

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It was investigated, which doping elements are suitable for the fabrication of ion implanted transistors for high frequency applications. Measured electrical and physical properties are mobility, carrier concentration, p n junction depth, and lattice damage. Best results which are essential for transistor application were obtained by aluminium (emitter) and arsenic (base) implantation. The arsenic implantation is used only for predeposition, the implanted aluminium requires no further diffusion process. Transistors with an implanted emitter showed current gains and transit frequencies which are within the specificat,ion for transistors made by conventional technique. The current gain however is somewhat reduced by a tail of the implantation profile of the aluminium atoms.Es wurde untersucht, welche Dotierungselemente sich zur Herstellung ionenimplantierter p-n-p-Germanium-Hochfrequenztransistoren eignen. Hierzu wurden gemessen : Beweglichkeit, Flachenladungskonzentration, Tiefe des p-n-Uberganges und Gitterschiidigung. Die fur Transistoren besten Daten ergaben sich fur Aluminium (Emitter) und Arsen (Basis). Die Implantation des Arsens dient hierbei nur zur Vorbelegung, die Implantation des Aluminiums erfordert keine weitere Diffusion. Stromverstarkung und Grenzfrequenz von Transistoren mit implantiertem Emitter liegen innerhalb der Spezifikationen von iiquivalenten Transistoren konventioneller Bauart, die Stromverstarkung wird allerdings durch einen Profilauslaufer (channeling) verringert.

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Clustereigenschaften leichter Kerne

Rotter¹

1968

Fortschr. Phys.

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The B11 (p, α) Be8 reaction and C12 states between 15 and 20 MeV

Cited by 54 publications

References 11 publications

Resolving the $${}^{11}\hbox {B}{(p,\alpha _{0})}$$ cross-section discrepancies between 0.5 and 3.5 MeV

Resolving the $${}^{11}\hbox {B}{(p,\alpha _{0})}$$ cross-section discrepancies between 0.5 and 3.5 MeV

Ion-implanted Ge transistor: Basic experiments

Clustereigenschaften leichter Kerne

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