The average size of Si nanoparticles prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne

Wang, Y.L.; Deng, Zechao; Fu, Guangsheng; Zhou, Ying; Chu, Lizhi; Peng, Ying

doi:10.1016/j.tsf.2006.07.031

Cited by 12 publications

(5 citation statements)

References 15 publications

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“…For way c), the pulsed laser ablates the single-crystalline Si target and the ablated particles (Si atoms and so on) are ejected from the surface of the Si target; ambient gas is introduced in (a) E-mail: hdwangyl@mail.hbu.edu.cn order to induce more intense collisions among the ablated particles and improve the qualities of the prepared films. And the average size of np-Sis can be altered by varying the ambient pressure [16], the target-substrate distance [17], the ambient species [18], the laser pulse repetition rate [19] and the mixed atomic ratio of two high-purity inert gases [20]. As already known, PLA with ns laser in base vacuum will yield α-Si films, thus the post-anneal process is necessary to the formation of np-Sis, as shown in way a) or b).…”

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confidence: 99%

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

et al. 2009

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Nanocrystalline silicon (nc-Si) films were systematically prepared via three ways: a) laser anneal or b) thermal anneal of the amorphous silicon (α-Si) films deposited by pulsed-laser ablation (PLA) in base vacuum, c) direct PLA in high-purity Ar gas with pressure of 10 Pa. The anneal-laser fluence, thermal-anneal temperature and ablation-laser fluence thresholds corresponding to the beginning of nanoparticles formation were respectively determined by using scanning electron microscopy (SEM), Raman and X-ray diffraction (XRD) techniques. Incorporated with crystallization mechanism, energies compensated for the formation of one Si nanoparticle in the three ways were calculated approximately. The result shows that for different crystallization ways, the potential barriers during the formation of one ∼16 nm nanoparticle are on the order of 10-9 mJ.

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confidence: 99%

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

et al. 2009

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“…The Raman peak frequency strongly depends on the grain size. From Raman spectra, the average grain size was estimated to be 5.6 nm using d = 2(B/W) 1/2 , where W is the shift of Raman peak of nanoparticle composite film with respect to that of reference single-crystalline Si, and the parameter B = 2.0 cm -1 nm 2 [11,12]. Optical band gap (E g ) was investigated for the Si-nanoparticle composite films at various positions Z to reveal effects of Si nanoparticles on the band structure of Si films.…”

Section: Deposition Of Si-nanoparticle Composite Filmsmentioning

confidence: 99%

Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control

Kanemitsu

Ichida

Seo

et al. 2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

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Crystalline Si nanoparticles were successfully fabricated by a multi-hollow discharge plasma CVD method. Optical band gap of Si-nanoparticle composite films was controlled in a range of 1.6-1.9 eV by the volume fraction of Si nanoparticles in the films. SiN nanoparticle composite films were also successfully produced using a double multi-hollow discharge plasma CVD method in SiH 4 /H 2 and N 2 gas mixture. High optical band gap of 2.1-2.2 eV was achieved by adding N atoms to the Si naoparticles.

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“…17 It is reported that the grain size of Si nanoparticles can be affected by adjusting ambient gas composition in PLD deposition process. 18 However, from the viewpoint of the best knowledge, few reports have been reported on the results of the Ba x Sr 1−x TiO 3 films prepared by PLD method in the mixture of oxygen and an inert gas. In this paper, in order to investigate the effect of argon introduction on structural and physical properties of Ba 0.6 Sr 0.4 TiO 3 (BST) film prepared by PLD, BST films grown on Nb-SrTiO 3 (STON) substrates were prepared by PLD in pure oxygen and the mixture of argon and oxygen.…”

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confidence: 99%

Structural and physical properties of Ba_0.6Sr_0.4TiO₃ film prepared by pulsed laser deposition in a mixture of argon and oxygen

et al. 2015

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In order to investigate the effect of argon introduction on the structural and physical properties of Ba 0.6 Sr 0.4 TiO 3 (BST) films, epitaxial BST films have been grown by pulsed laser deposition (PLD) on (001) oriented Nb-SrTiO 3 (STON) substrates in the ambient gas of pure oxygen and the mixture of argon and oxygen, respectively. The atomic force microscopy (AFM) reveals that the sample deposited in the mixture of argon and oxygen has a bigger grain size than that deposited in pure oxygen. The dielectric properties of two BST films have been investigated using the Pt/BST/STON parallel plate capacitors. The tunability and the figure of merit (FOM) of the BST film deposited in the mixture gas are about 41% and 7.07 at a DC bias voltage of 8 V at room temperature, which are better than 32% and 4.51, for BST film deposited in pure oxygen. On account of the introduction of argon, the leakage current density of the BST film deposited in the mixture gas has fallen by almost five times, and the leakage current mechanism is both in accordance with ohmic conductive mechanism.

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The average size of Si nanoparticles prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne

Cited by 12 publications

References 15 publications

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control

Structural and physical properties of Ba_0.6Sr_0.4TiO₃ film prepared by pulsed laser deposition in a mixture of argon and oxygen

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The average size of Si nanoparticles prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne

Cited by 12 publications

References 15 publications

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

The difference of energies of Si atoms with single-crystalline, amorphous, free and nanoparticle configurations

Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control

Structural and physical properties of Ba0.6Sr0.4TiO3 film prepared by pulsed laser deposition in a mixture of argon and oxygen

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Structural and physical properties of Ba_0.6Sr_0.4TiO₃ film prepared by pulsed laser deposition in a mixture of argon and oxygen