Combinatorial Plasma CVD of Si Nanoparticle Composite Films for Band Gap Control

Abstract

Crystalline Si nanoparticles were successfully fabricated by a multi-hollow discharge plasma CVD method. Optical band gap of Si-nanoparticle composite films was controlled in a range of 1.6-1.9 eV by the volume fraction of Si nanoparticles in the films. SiN nanoparticle composite films were also successfully produced using a double multi-hollow discharge plasma CVD method in SiH 4 /H 2 and N 2 gas mixture. High optical band gap of 2.1-2.2 eV was achieved by adding N atoms to the Si naoparticles.