2017
DOI: 10.1063/1.4983559
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The asymmetric band structure and electrical behavior of the GdScO3/GaN system

Abstract: III-V nitrides are interesting materials for a very wide variety of electronic and optoelectronic devices. In this study, their interaction with GdScO 3 (GSO), a ternary rare earth oxide, is investigated for MOS applications. We compare pulsed laser deposited amorphous and crystalline epitaxial GdScO 3 in terms of their band alignment with the underlying GaN substrate and the resulting electrical characteristics of the MOS stack. The crystal structure of GdScO 3 and GaN is investigated by means of x-ray diffra… Show more

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Cited by 6 publications
(5 citation statements)
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References 16 publications
(19 reference statements)
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“…Previous works have looked at a wide range of epitaxial oxides, of various crystal structures and compositions as high‐ k insulators on GaN, using MBE, PLD, and ALD, with some examples listed in Table . We note that MBE‐grown hexagonal Gd 2 O 3 and monoclinic PLD‐grown perovskite GdScO 3 as top performers, obtaining leakage currents on the order of μA cm −2 at 1.5 MV cm −1 , and permittivities of ≈24.…”
Section: Materials and Functional Propertiesmentioning
confidence: 99%
“…Previous works have looked at a wide range of epitaxial oxides, of various crystal structures and compositions as high‐ k insulators on GaN, using MBE, PLD, and ALD, with some examples listed in Table . We note that MBE‐grown hexagonal Gd 2 O 3 and monoclinic PLD‐grown perovskite GdScO 3 as top performers, obtaining leakage currents on the order of μA cm −2 at 1.5 MV cm −1 , and permittivities of ≈24.…”
Section: Materials and Functional Propertiesmentioning
confidence: 99%
“…Epitaxially grown GdScO 3 as crystalline gate dielectric GdScO 3 can be epitaxially grown on GaN via pulsed laser deposition (PLD) at 700°C [21,22]. The high growth temperature and the already crystalline structure makes it thermally very stable and the integration with a high-κ first process possible.…”
Section: Impact Of Ohmic Contact Formation On Mishemts With Al 2 O 3 ...mentioning
confidence: 99%
“…The high growth temperature and the already crystalline structure makes it thermally very stable and the integration with a high-κ first process possible. Additionally, the high dielectric constant of κ 24-30 [22] is beneficial for achieving a small threshold voltage shift due to a low impact of the high capacitance in series. It was determined, that a 20 nm thick GdScO 3 is necessary for a good passivation with a low gate leakage current, even slightly below the Al 2 O 3 passivated MISHEMTs [23].…”
Section: Impact Of Ohmic Contact Formation On Mishemts With Al 2 O 3 ...mentioning
confidence: 99%
“…LuScO 3 , for example, has only formed the perovskite phase when epitaxially stabilized on a NdGaO 3 or DyScO 3 substrate [40]. As these materials have mostly been used as dielectrics [41], substrates [36], and recently, flexoelectrics [42], they have often been prepared as thin films by atomic layer deposition [43] or pulsed laser deposition [44,45], or as single crystals using the Czochralski technique [36]. Using these materials in applications that require high surface area powders, such as heterogeneous catalysis [46] or gas capture [47] and separation [48], requires a different approach.…”
Section: Introductionmentioning
confidence: 99%