2009
DOI: 10.1017/s1431927609090345
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The Applications ofIn SituElectron Energy Loss Spectroscopy to the Study of Electron Beam Nanofabrication

Abstract: An in situ electron energy loss spectroscopy (EELS) technique has been developed to investigate the dynamic processes associated with electron-beam nanofabrication on thin membranes. In this article, practical applications germane to e-beam nanofabrication are illustrated with a case study of the drilling of nanometer-sized pores in silicon nitride membranes. This technique involves successive acquisitions of the plasmon-loss and the core-level ionization-loss spectra in real time, both of which provide the in… Show more

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Cited by 4 publications
(3 citation statements)
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References 28 publications
(52 reference statements)
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“…Figure 1(a) shows a schematic of the electron beam used to drill nanopores on a silicon nitride membrane which was subsequently observed with TEM. When the high-intensity () electron beam was used to drill nanopores on a silicon nitride membrane, a nanopore with an hourglass shape could be formed with sputtering 2528 . The use of the high-intensity electron beam for the illumination of the nanopore narrowed the sharp edge of the hourglass shape to a cylindrical shape, and resulted in the destruction of the original shape 29 .…”
Section: Resultsmentioning
confidence: 99%
“…Figure 1(a) shows a schematic of the electron beam used to drill nanopores on a silicon nitride membrane which was subsequently observed with TEM. When the high-intensity () electron beam was used to drill nanopores on a silicon nitride membrane, a nanopore with an hourglass shape could be formed with sputtering 2528 . The use of the high-intensity electron beam for the illumination of the nanopore narrowed the sharp edge of the hourglass shape to a cylindrical shape, and resulted in the destruction of the original shape 29 .…”
Section: Resultsmentioning
confidence: 99%
“…Although High-Resolution Transmission Electron Microscopy (HRTEM) is primarily a technique for studying bulk defects, it has been applied in the profile-imaging mode to derive information about surfaces [6]. Nowadays the EELS spectroscopy provides excellent alternatives to monitor the time evolution of chemical reactions [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…Although sputtering occurs mainly at the bottom side of the TEM specimen [37][38][39], the material loss from the top surface may be contributed by the generation and movement of vacancies or voids from the back-sputtering interface towards the top surface along the 1100 { ¯} planes [12,40]. Meanwhile, due to the Gauss intensity distribution around the central intense point of the e-beam [41], the sputtering is angled on both sides of the membrane, which leads to a wedge-shaped section surrounded by the 1101 { ¯} and 0001 { } planes with relatively lower surface energies, as illustrated in figures 5(a) and (d) [27,29]. It is worth noting that the sidewall angle in the cross section is constant (calculated to be about 62°), which differs from that in isotropic amorphous materials whereas the angle varied closely associated with material composition, precise drilling conditions (e-beam size, beam intensity), etc [9,12,[18][19][20][21].…”
Section: Possible Formation Processes For Different 3d Structuresmentioning
confidence: 99%