The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solution

On the High Compositional Uniformity of Thick GaAlAs Layers Grown by Liquid Phase Electroepitaxy

“…When a thick layer of solution is used the contribution of convection cannot be neglected and two effects are expected. The presence of convection during the source preparation procedure should lead to a decrease of the composition gradient in the source [4], what in turn is propitious for the growth of uniform ternary layers. Moreover, the convective mixing of solution volume breaks down the direct correspondence between the composition profiles of the source and epílayer, resulting in a smoothing of Al distribution in the grown GaAlAs.…”

“…1a) source material is grown by cooling, the change of temperature and the melt depletion should sharply grade its composition profile leading to a decrease of Al content in the solid with an increase of its thickness (Fig. 1b) -a phenomenon typical for LPE grown GaAlAs [4]. Therefore, the composition profile of the electroepitaxial layer, grown by recrystallization of the source material, should be graded too, but with the opposite sign of the composition gradient (Fig.…”

Concentration profile and growth rate studies of In1 ? x Ga x P LPE by computer simulation technique

“…It is more convenient to use mole fraction of the components rather than their concentration, so the relations between the components in both liquid and solid are given as [15] X i : Twentyfive such segments were used; the first segment was adjacent to the interface and the last segment was at the boundary of the solution remote from the interface.…”

“…Using the following equation, one can obtain the atom fraction of each solute at different segments [15]: Using the following equation, one can obtain the atom fraction of each solute at different segments [15]:…”

Liquid phase epitaxial growth of GaAs

“…As in the step-cooling technique, the substrate and solution are cooled at a constant rate to a temperature below the liquidus temperature without spontaneous nucleation, then brought into contact. Cooling is continued at the same constant rate without intemption, until the solution and substrate are separated (Crossley and Small, 1972b;Hsieh, 1974a, b). This growth method has been observed to produce epilayers with a smoother surface morphology than that produced by ramp-cooling alone, due to the enhanced nucleation driving force.…”