The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xianliang; Xu, Zhongjie; Yuan, Xiaobo

doi:10.1016/j.jmmm.2018.01.016

Cited by 7 publications

(4 citation statements)

References 28 publications

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“…This is probably due to the orbital hybridization of the C and Ni atoms [30,34]. This strong orbital hybridization between graphene and Ni atoms is generally considered to be the main reason for the perfect spin filtering of the graphene/Ni (111) interface, as previously studied [35,36]. Hence, the full-covered, clean, epitaxial and strong coupling graphene/Ni (111) interface prepared by our method will be a highlight for graphene spintronics.…”

Section: Resultsmentioning

confidence: 53%

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

et al. 2021

Nanomaterials

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The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

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Section: Resultsmentioning

confidence: 53%

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

et al. 2021

Nanomaterials

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“…The higher concentration of spins causes enhanced scattering and the loss of spin information increase, resulting in shorter spin relaxation times. 44 Indeed, we observe a 26% decrease in carrier lifetime compared to UCD-GSVs. We observe a 70% decrease in MR change that confirms the lower tunneling rate through the multilayer and the associated increase of spin accumulation at the interfaces (Figure 4d).…”

mentioning

confidence: 67%

“…This competition between spin-transport and spin-scattering is usually not considered theoretically when predicting the performance of GSVs which may lead to an overestimation of the achievable MR. ,, Indeed, we find that the MR for multilayer GSVs is less than that for single-layer GSVs.…”

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confidence: 99%

Realizing High-Quality Interfaces in Two-Dimensional Material Spin Valves

Huang,

Wu,

et al. 2023

ACS Materials Lett.

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Two-dimensional (2D) materials are considered enabling components in magnetic spin valves that could increase the performance and robustness of spintronic devices. However, experimental results have been below expectations due to challenges in achieving contamination-free interfaces between the 2D material barrier and its ferromagnetic contacts. We demonstrate an approach to realize interfaces with unprecedented quality using a single-step fabrication approach. By simultaneously depositing two asymmetric contacts on a suspended 2D material, the effect of oxidation and voiding can be avoided. Graphene-based spin valves show a strong interaction at the interface that leads to exceptional magnetoresistance values. This advance permits the characterization of the intrinsic spin properties at the Co/graphene interface, and we establish the limitations of traditional Hanle-based spin-lifetime measurements. Finally, we investigate the differences in spin transport for multilayer graphene-based spin valves. An increased level of spin-scattering is observed that limits the achievable performance and provides guidelines for the future integration of 2D materials in spintronic devices.

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“…Due to the strong spin filtering effect, tunable spin transport properties, and increased magnetoresistance with graphene layers, thickness-controlled multilayer graphene has been attracting wide interest because of its potential use in electronic and spintronic devices. − Toko et al reported the thickness control of a graphene film over a wide range (5–200 nm) using layer exchange techniques. , However, this technique appears to be about controlling the graphene film thickness rather than controlling the number of graphene layers. Chemical vapor deposition (CVD) is an effective method for the growth of a single-crystal graphene layer on Cu catalysts.…”

Section: Introductionmentioning

confidence: 99%

Thickness-Controlled Growth of Multilayer Graphene on Ni(111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

Qiu

Guo

Zhang

et al. 2023

ACS Appl. Nano Mater.

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Thickness-controlled multilayer graphene has been attracting wide interest in electronic and spintronic devices due to its tunable electronic structure and spin transport properties. In particular, the strong spin filtering effect in a lattice-matched Ni(111)/multilayer graphene heterostructure provides an ideal platform for developing high-performance spin valves and magnetic tunnel junctions. However, the thickness-controlled synthesis of multilayer graphene on Ni(111) substrates is still a large challenge, which seriously restricts the development of graphene spintronic devices. Here, we report an approximate equilibrium segregation method for large-area multilayer graphene films on Ni(111) substrates by regulating the growth process of carbon dissolution and segregation. The uniformity and coverage of multilayer graphene films are controlled precisely in an atmospheric tube furnace system by modulating the Ni film thickness, gas atmosphere, and cooling rate. Characterization results systematically confirm the production of high-coverage, high-quality multilayer graphene on Ni(111) substrates. This work provides a reliable method for the controllable fabrication of multilayer graphene on single-crystal ferromagnetic substrates, which would contribute to the application of graphene spintronic devices.

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The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Cited by 7 publications

References 28 publications

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Realizing High-Quality Interfaces in Two-Dimensional Material Spin Valves

Thickness-Controlled Growth of Multilayer Graphene on Ni(111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

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