The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

Durmuş, Haziret; Karataş, Şükrü

doi:10.1080/00207217.2018.1545145

Cited by 15 publications

(3 citation statements)

References 36 publications

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“…In the case of |ρ 2 | ≪ |qρ 3 /2kT| ≪ 1, which is valid for most cases of Schottky diodes [23], n (T) in equation ( 15) can be approximated as [23] which is of the same form as equation (14). Therefore, by comparing equation ( 14) and equation ( 16), a theoretical approximation of T 0 can be obtained as…”

Section: T0 Effectmentioning

confidence: 98%

“…Despite their conceptual differences, both Tung's and Werner's models have been successfully used in the interpretation of experimental results on various metal-semiconductor Schottky contacts. Indeed, several studies have been performed using Werner's model to investigate Schottky diodes [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30], whereas other researchers have been alternatively following Tung's model to explain inhomogeneous Schottky barrier heights [19,[30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

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Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100)

Soltani¹,

Gammon²,

Pérez‐Tomás³

et al. 2020

Semicond. Sci. Technol.

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This study presents the characterization of the nickel–vanadium (NiV) Schottky diode on n-type silicon (Si) in the temperature range 75 K–300 K. The experimental current–voltage (I–V) measurements are first analyzed by using the thermionic emission (TE) theory. For this purpose, the vertical optimization method is used to find the values of the TE parameters, i.e. the values of the ideality factor, barrier height, and series resistance. It is found that these parameters exhibit strong temperature dependence, i.e. an increase of the ideality factor and a decrease of the barrier height ϕ B and the series resistance R s when the temperature decreases, which is due to inhomogeneities at the Schottky interface. Therefore, we employ Werner’s model under the assumption of a Gaussian distribution to analyze the temperature dependence of the TE parameters. The mean and standard deviation of the barrier height are obtained as ϕ B 0 = 0.68 eV and σ 0 = 53.665 , respectively. In addition, we show that the apparent barrier height and apparent ideality factor are in accordance with Werner’s model. Furthermore, we use the modified Richardson plot to find the value of the Richardson constant. The obtained value of the latter is A ∗ = 111.56 A cm−2 K−2 and is very close to the theoretical value of 112 A cm−2 K−2 of n-type Si. Finally, we investigate the temperature dependence of the ideality factor and show the validity of the T0-effect for the NiV/Si Schottky diode.

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Section: T0 Effectmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100)

Soltani¹,

Gammon²,

Pérez‐Tomás³

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Factual SDs necessitate using the capacitance (C) technique for characterization [3]. Diverse deposition technologies are employed to fashion TFSDs, such as flash evaporation [4], sputtering [5,6], pulsed laser deposition [7,8], etc. SDs have been shown much reverence in the electronic industry, and they are actively involved in developing gas sensors, solar cells and switching devices.…”

Section: Introductionmentioning

confidence: 99%

A review on electrical transport properties of thin film Schottky diode

Dhruv¹,

Dhruv²

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. The review audits the fabrication and characterization of the TF metal-semiconductor (MS) diode, a TFSD. The work functions of metal (ϕ m) and semiconducting material (ϕs ) determines whether the established MS contact is ohmic or rectifying. Current-voltage (I – V) and capacitance-voltage (C – V) characterizations are essential electrical transport measures of TFSDs. The I – V and C – V outcomes are conferred, and archetypal results are parroted. The TFSD device is emblematic of a heterojunction diode (HJD). The rectification ratio (RR), saturation current (I0), ideality factor (n), Schottky barrier height (ϕB), and carrier concentration may all be calculated using I – V and C – V data. Thermionic emission (TE) and/or space charge limited conduction mechanisms (SCLC) may conduct electricity in TFSDs. Anderson’s model can theoretically be used to construct a TFSD energy band diagram.

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Investigation of the Structural, Optical, and Electrical Properties of ZnO/4‐Amino‐2‐Methylquinoline p–n Heterojunction by Spin‐Coating Method

Demir

2024

Physica Status Solidi (a)

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A p–n heterojunction diode is fabricated using a p‐type 4‐amino‐2‐methylquinoline (C10H10N2) on an n‐type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C10H10N2 film using the same method. X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–vis spectroscopy, and current–voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions π→π*, n→π*, and d→d* in the ZnO/C10H10N2 heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (n) = 2.87, series resistance (RS) = 1 MΩ, and shunt resistance (RSh) = 5 kΩ are found.

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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

Cited by 15 publications

References 36 publications

Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100)

Gaussian distribution of inhomogeneous nickel–vanadium Schottky interface on silicon (100)

A review on electrical transport properties of thin film Schottky diode

Investigation of the Structural, Optical, and Electrical Properties of ZnO/4‐Amino‐2‐Methylquinoline p–n Heterojunction by Spin‐Coating Method

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