The adsorption kinetics of molecular oxygen and the desorption kinetics of GeO on Ge( 100)

Hansen, David; Hudson, John B.

doi:10.1016/0039-6028(93)90387-y

Cited by 38 publications

(27 citation statements)

References 29 publications

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“…The initial sticking probability for oxygen with 26 meV was a few orders of magnitude greater than values reported by other groups. [15][16][17] This large difference is most likely because of the cleanness of the surface. We observed that the presence of a small amount of contamination detected by SR-XPS can greatly inhibit oxidation, even for the high incident energy oxygen used in this study.…”

Section: Resultsmentioning

confidence: 99%

“…The dominance of the trapping-mediated process in the low incident energy region can also explain the fact that a cleaner surface exhibits higher reactivity than other reported values. [15][16][17] After the rapid decrease of s 0 with E t , s 0 started to increase with further increase of E t . This observation suggests the onset of the direct-activated chemisorption process of impinging oxygen with higher translational energies of oxygen.…”

Section: Resultsmentioning

confidence: 99%

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In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O2) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O2. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge2+ and a higher final oxygen coverage. We demonstrated that hyperthermal O2 beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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“…3a are converted to dark products and they are aligned along the dimer row. Because GeO begins to desorb at 400 • C [19], these products consist of a mobile Ge−O complex and they are clustered at 300 • C.…”

Section: Annealing Effectmentioning

confidence: 99%

STM study of the initial oxidation stage of Ge(100) 2×1

Fukuda¹,

Ogino²

1998

Applied Physics A: Materials Science & Processing

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The initial stage of oxygen chemisorption on the Ge(100) surface was studied by scanning tunneling microscopy. By using a defect-free surface and in situ oxidation, oxygen-induced products could be unambiguously determined. Two types of bright products and two types of dark products were identified. One of the bright products is a major product and it protrudes at the center of the dimer. Since this product was observed even after annealing at 300 • C, it is a stable product. The other bright product is a bright spot at one of the dimer atoms, and dimer buckling is stabilized near this product. The two dark products are similar to the missing dimer defects in filled-state images, but they appeared as bright spots in empty-state images. After annealing of the oxygen-chemisorbed surfaces, the dark product aligned in the dimer row with a 2× periodic structure inside.The invention of scanning tunneling microscopy and its descendants opened up a new era for semiconductor technology. One fruitful application of these microscopies is the atomistic investigation of chemical reactions on semiconductor surfaces with gaseous molecules. Oxidation is one of the key technologies for semiconductors and a detailed understanding of oxidation is vital for studying the interface formation between substrates and oxide layers. On the Si(111) 7 × 7 surface, direct imaging of the reaction sites by STM [1-3] has proved the existence of several types of chemisorption geometries. Recent tip-induced chemical-bond breaking [4] unambiguously identified the presence of the molecular precursor state, which was previously indicated by high-resolution electron energy loss spectroscopy [5], photoelectron spectroscopy [1, 6], and electron-stimulated desorption [7] studies. Although the Si(100) surface is more important from a technological point of view and has a much simpler surface reconstruction, i.e., the 2 × 1 dimer structure, STM has not been able to provide atomically resolved images of oxygeninduced structures. Over the past 10 years, several authors * To whom correspondence should be addressed have attempted to identify the initial chemisorption geometries on the Si(100) surface by using STM. However, since oxygen first reacts with surface defects rather than with perfect dimers [8,9] and since the substrate atoms are ejected by the oxygen reaction [10], it has been difficult to acquire a clear picture of chemisorption products that is comparable to the theoretically predicted structure.We present here an STM study of the initial oxygen chemisorption on the Ge(100) 2 × 1 surface. The Ge(100) 2 × 1 surface has atomic and electronic structures quite similar to those of the Si(100) 2 × 1 surface [11,12], and therefore we would expect to see similar oxygen adsorption. A theoretical calculation suggests almost the same chemisorption configurations, but it gives only 25% of the adsorption energy compared to Si dimers [13]. Therefore, one would expect that the exothermic effect [14] would be less pronounced on the Ge(100) surface. Experimentally...

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“…15 GeO is known to sublimate at low temperature. 19 At 500°C, the Ge oxide peak was close to that of the Ge 3ϩ (Ge 2 O 3 ) oxide state.…”

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confidence: 90%

Thermal desorption of Ge native oxides and the loss of Ge from the surface

Campbell

2004

Journal of Elec Materi

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The adsorption kinetics of molecular oxygen and the desorption kinetics of GeO on Ge( 100)

Cited by 38 publications

References 29 publications

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

STM study of the initial oxidation stage of Ge(100) 2×1

Thermal desorption of Ge native oxides and the loss of Ge from the surface

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