Thermal desorption of Ge native oxides and the loss of Ge from the surface

Oh, Jungwoo; Campbell, Joe C.

doi:10.1007/s11664-004-0144-4

Cited by 92 publications

(67 citation statements)

References 18 publications

(16 reference statements)

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“…2, XP spectra in the range of the O1s, C1s and Ge2p3/2 photoemission lines of the epiready Ge(100) substrates (black line) and the substrate surface after H2 annealing in MOVPE (green line) are depicted. On the epiready substrate the O1s binding energy observed at about 532.4 eV complies well with the chemical shift of +1.4 eV compared to the elemental O1s line at 531 eV, as expected for oxygen bound in GeO2 [7]. After H2 annealing two small peaks at 534 and 525 eV are measured in this range that can be assigned to the Auger lines of clean Ge, L3M23M23 and L2M23M23, respectively [8].…”

Section: Resultssupporting

confidence: 82%

“…After H2 annealing two small peaks at 534 and 525 eV are measured in this range that can be assigned to the Auger lines of clean Ge, L3M23M23 and L2M23M23, respectively [8]. At the position of the Ge2p3/2 line we observed a peak at 1217.5 eV, associated to elemental Ge [7], and the Ge2p photoemission from the GeO2 layer formed an additional peak structure at about 1220.5 eV. After hydrogen annealing the peaks associated to GeOx are vanished and the peak intensities related to elemental Ge are increased.…”

Section: Resultsmentioning

confidence: 73%

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Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Brückner

Supplie

Barrigón

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 73%

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Brückner

Supplie

Barrigón

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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“…In our case the Ge nanostructure showed similar behavior with the annealing effects to that observed in the case of Ge thin film, i.e. a loss of material due to the oxidation and thermal desorption of the Ge oxides, which take place simultaneously [16]. In order to make statistical measurements we have employed, along with the AFM technique, the White Light Interferometry (WLI) technique.…”

Section: Introductionsupporting

confidence: 58%

“…As previously mentioned in the introduction, the annealing behavior of Ge thin film native oxides [16] and Ge nanostructures fabricated with the NSL technique has been studied in the literature [14]. It was found that the native oxide state naturally formed in the air was found to be primarily GeO 2 with small amounts of GeO ( < 2).…”

Section: Annealing Of the Ge Nanostructuresmentioning

confidence: 99%

“…Secondary ion mass spectroscopy (SIMS) profiles confirm the loss of 100 nm from the Ge layer at 600°C. X-ray photoelectron spectroscopy (XPS) analysis indicates that this proceeds by oxidation and thermal desorption of the Ge oxides, which take place simultaneously [16]. The shape variation of the Ge nanostructures through thermal annealing resulted, in the above mentioned reference [14], in a change of their dimensions while their volume remained constant.…”

Section: Annealing Of the Ge Nanostructuresmentioning

confidence: 99%

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Annealing study of two-dimensional patterned Ge nanostructures via nanosphere lithography

et al. 2011

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Abstract:Experimental studies on patterning hexagonal Ge nanostructures have been conducted on Si substrates through deposition of Ge with colloidal particles as a mask. The deposited Ge thin film possesses, according to the X-ray diffraction measurements, in plane texture, being epitaxial and aligned with the (111) Si substrate. The size distribution of the patterned Ge nanostructures is narrow, as indicated by the atomic force microscopy and scanning electron microscopy measurements. We have obtained Ge nanostructures with lateral dimension of 490 nm (height 12 nm), 200 nm (height 6 nm) and 82 nm (height 6 nm) by using different sizes of polystyrene spheres. We have performed in depth studies of the Ge nanostructures' behavior due to thermal and rapid thermal post-annealing processes. FT micro-Raman spectroscopy shows that there is no Si intermixing during the annealing process. In order to quantify the changes in the height and lateral dimension, we have performed atomic force microscopy and white light interferometry analysis. The changes in shape and the decrease in the area of a cross-section of Ge nanostructure will be discussed in respect to similar results shown in the literature for Ge thin films during the annealing process.

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Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics

Zheng

Zhang

Shi

et al. 2015

Adv Funct Materials

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Germanium is a promising candidate to replace silicon in nanoelectronics due to its significantly higher electron and hole mobilities. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge‐based nanoelectronics. By taking advantage of the impermeability of graphene, it is discovered that the insulating fluorinated graphene is able to act as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge‐based devices. The Ge‐based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness. First‐principles calculations reveal that interfacial diffusion, which would otherwise be unmanageable, is sufficiently obstructed by the fluorinated graphene. This new structure is expected to expedite the implementation of germanium as a channel material in next‐generation nanoelectronic devices.

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Thermal desorption of Ge native oxides and the loss of Ge from the surface

Cited by 92 publications

References 18 publications

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Annealing study of two-dimensional patterned Ge nanostructures via nanosphere lithography

Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics

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