The activation energies of chromium, iron and nickel in gallium arsenide

Allen, G A

doi:10.1088/0022-3727/1/5/308

Cited by 32 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, the experiment shows that the optimal conditions for observation of the instability under photoexcitation correspond t o the temperature interval 3, It is possible that just this is the reason for the significant shift of the Cr acceptor level in the interval 80 to 300 OK, which was mentioned in [2]. ed on the same samples a t room temperature and still higher.…”

Section: Role Of Donor-acceptor Interaction In Processes Of Instabilimentioning

confidence: 84%

On the influence of donor–acceptor interaction upon recombination and electrical instability in semi-insulating GaAs(Cr)

Воробьева¹,

Vorob’ev²,

Tretyak³

1973

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A model is developed for an isolated Cr impurity in GaAs assuming the presence of only one acceptor level at (Ec – 0.6 eV) which shifts down to ≈ (Ec – 0.8 eV) when an ionized donor is neighboured. An effect of longwave excitation of photocurrent is observed (77 to 150 °K), connected with the accumulation of electrons by the donors mentioned and the „transformation”︁ of the level (Ec – 0.8 eV) into the level (Ec – 0.6 eV) with much smaller capture cross‐section for electrons. The energy position of the donor is found to be (Ec – 0.35 eV) in case of a neutral acceptor and (Ec – 0.17 eV) when the acceptor is ionized. In the latter case the capture cross‐section of electrons for the donor is ≈ 10−19 cm2. Considering the mutual influence of the donors and the acceptors permits the prediction of a new scheme of the origin of the negative differential conductance; an increase of the recombination rate with the electric field because of the ionization of donors and the corresponding variation of the total electron capture cross‐section of the acceptors. This point of view is confirmed by the experiment.

show abstract

Section: Role Of Donor-acceptor Interaction In Processes Of Instabilimentioning

confidence: 84%

On the influence of donor–acceptor interaction upon recombination and electrical instability in semi-insulating GaAs(Cr)

Воробьева¹,

Vorob’ev²,

Tretyak³

1973

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

“…Iron that has been added to a GaAs melt before the commencement of crystal growth is found to act as a deep'acceptor centre with an associated energy level at about 0.52 eV above the valence band edge (Allen 1968). It is generally assumed that the iron is accommodated on the gallium site in the form Fe& and that it can accept an electron to become Fe%.…”

Section: Introductionmentioning

confidence: 99%

The properties of GaAs diffused with iron

Brozel

Foulkes

Tuck

et al. 1983

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Iron has been diffused into GaAs from the vapour phase. Use has been made of radiotracer techniques, electrical measurements and electron paramagnetic resonance to investigate the properties of the material after diffusion. The iron is found to behave as a net acceptor in material that was originally n-type but its electrical activity is only about 0.5. It is concluded that the diffusion mechanism is primarily interstitial but that most of the iron in the bulk of a specimen is substitutional. Close to the surface of a diffused slice the situation is less clear and it seems likely that the iron is incorporated in the form of some complex.

show abstract

“…The peak at 0.92 eV in Fig. 2 is most probably due to chromium, which was found to be present at a concentration of 2 x I014/cm 3 by secondary ion mass spectroscopy (SIMS) and has been shown to introduce a peak at 0.9 eV in solid-state photocapacitance (3,(10)(11)(12), photoconductivity (13), and optical absorption (14,15) spectra. Kolchanova et al (13) showed that a localized transition must be involved, and Lin and Bube (11) suggested that electrons are excited from the ground state to the excited state, Cr2+(d4), and are then thermally excited to the conduction band.…”

mentioning

confidence: 98%