The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs

Chen, Meng Chu; Cheng, Yung Chen; Huang, Chih‐Wei; Wang, Hsiang‐Chen; Lin, Kwang‐Lung; Yang, Zu Po

doi:10.1016/j.jlumin.2016.04.010

Cited by 3 publications

(2 citation statements)

References 23 publications

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“…We confirm that the quantum wells are grown in the semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) face direction. Quantum wells on the semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) face less lattice mismatches between InGaN and GaN, as reported by previous studies [29][30][31][32][33][34][35][36]. We believe that less lattice mismatches result in better-quality GaN nanorods and InGaN/GaN quantum wells.…”

Section: Tem and Hrtem Measurementssupporting

confidence: 54%

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

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We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO 2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO 2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO 2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

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Section: Tem and Hrtem Measurementssupporting

confidence: 54%

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

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“…In these cases, additional tensile stress from Si doping will be brought in. In recent years, efforts have been made to overcome these difficulties via using intermediate layers with suitable compressive stress to counterbalance tensile stress [ 10 – 16 ], delta doping for strain relaxation [ 17 , 18 ], or the lattice-matched buffer layer deposition [ 19 , 20 ]. According to previous works [ 17 ], periodic Si δ-doping architecture of the n-type GaN layer could achieve smoother GaN layer with higher crystalline quality and lower crack density than on Si uniformly doped GaN.…”

Section: Introductionmentioning

confidence: 99%

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

et al. 2018

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This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10−2 s−1 compared to (3.6~4.7)× 10−2 s−1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10−3 s−1 compared to [9~7] ×10−4 s−1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.

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Role of RF power in growth and characterization of RF magnetron sputtering GaN/glass thin film

Mantarcı

2019

Emerging Materials Research

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Gallium nitride (GaN) thin films were grown on a soda lime glass substrate using radio frequency (RF) magnetron sputtering under various RF powers. The X-ray diffraction results confirmed that the thin film had a hexagonal gallium nitride structure with a (100) plane. The structural properties (grain size, strain and stress) of the gallium nitride thin film varied with change in RF power. The reasons for this variation are discussed. The Raman results showed the characteristic E 2(high) optical phonon mode of hexagonal gallium nitride. From scanning electron microscopy analysis, agglomerations were observed in some regions of the surface of the thin film. From the atomic force microscopy images, the almost homogeneous, nanostructured and low-roughness surface of the thin film can be observed. The optical bandgap energy of the thin film showed non-linear variation with change in RF power. The reason for this is discussed. Also, the agreement between the experimental measurements was also examined. To sum up, the morphological, optical and structural properties of the gallium nitride thin film can be controlled by altering the RF power.

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The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs

Cited by 3 publications

References 23 publications

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Role of RF power in growth and characterization of RF magnetron sputtering GaN/glass thin film

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