The Ab-initio Study of Bulk Single Layer Defected Graphene Towards Graphene Device

Abstract

Graphene is a promising new material for the construction of graphene devices because of its surface modification can be tuned the band gap. In this paper, the electronic and transport characteristics of defected graphene device are investigated. Both the electronic and transport characteristics are simulated using density functional theory (DFT). The band structures and transmission spectra are analyzed. The conductance and thermal conductance characteristic for both graphene is compared. From the simulation, it is found that the conductance, thermal conductance, and the I-V curves depend on the transmission spectrum of the graphene sheet or graphene device itself. The comparison between the defected graphene itself shows that the single layer with two vacancies shows better performance.

Bilayer Graphene Conductance Analysis based on FET Channel

“…The growing interest in two dimensional graphene has attracted much attention attributed because of its unique properties such as high mobility, its large surface-to-volume ratio, high conductivity and strong mechanical and elasticity properties [1]- [3]. Carbon base material with low dimensional behavior has been explored by many researchers for it has been widely used to accommodate nowadays technology.…”