The (0001)-surface of 6HSiC: morphology, composition and structure

Starke, Ulrich; Bram, Ch.; Steiner, P.; Hartner, W.; Hammer, Lutz; Heinz, K.; Müller, Kathrin

doi:10.1016/0169-4332(95)00024-0

Cited by 116 publications

(73 citation statements)

References 29 publications

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“…Several authors prepared it starting from a chemically pre-treated sample by simple annealing [5,6]. Kaplan obtained it by annealing the Si-rich (3×3) phase [7], a third method proposed was annealing a SiC(0001) surface under Si flux [8].…”

Section: Surface Preparationmentioning

confidence: 99%

Tailoring the SiC Subsurface Stacking by the Chemical Potential

Starke

Bernhardt

Schardt

et al. 2004

MSF

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Abstract:The stacking orientation of bilayers determines the polytype of SiC material. For the development of polytype heterojunctions a controlled switch from one stacking sequence to another is required. In the present paper it is demonstrated for 4H-SiC and 6H-SiC, that the chemical environment during preparation of the (• reconstruction on SiC(0001) influences the bilayer stacking in the topmost surface region. A silicon rich growth environment results in three bilayers in identical orientation at the very surface, which in the case of 4H-SiC corresponds to breaking the bulk stacking sequence. Oxygen rich preparation conditions lead to a reduction to two identically oriented bilayers for both polytypes. The reconstruction geometry of the (• phase is independent of the polytype and the terminating stacking sequence of the underlying material. In consequence, the surface stacking and as such the starting point of a polytype heterojunction can be taylored by the chemical potential.

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Section: Surface Preparationmentioning

confidence: 99%

Tailoring the SiC Subsurface Stacking by the Chemical Potential

Starke

Bernhardt

Schardt

et al. 2004

MSF

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“…33,34 Although the ͑0001͒ surface of the hexagonal polytypes 6H-SiC and 4H-SiC is crystallographically equivalent to Si͑111͒, the surface chemistry is different on account of the additional carbon atoms. Dipping these surfaces in HF leaves them covered with hydroxyl groups, 32,35,36 and annealing to temperatures above 950°C is necessary to remove the oxygen from the wet-chemically prepared surface. 13 In addition, they are usually contaminated with hydrocarbons as well, which may decompose partially at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

et al. 2003

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We report on highly resolved core-level and valence-band photoemission spectroscopies of hydrogenated, unreconstructed 6H-SiC(0001) and (0001 ) using synchrotron radiation. In the C 1s core level spectra of 6H-SiC(0001 ) a chemically shifted surface component due to C-H bonds is observed at a binding energy (0.47Ϯ0.02) eV higher than that of the bulk line. The Si 2p core-level spectra of SiC (0001) suggest the presence of a surface component as well but a clear identification is hindered by a large Gaussian width, which is present in all spectra and which is consistent with values found in the literature. The effect of thermal hydrogen desorption was studied. On 6H-SiC(0001) the desorption of hydrogen at 700-750°C is accompanied by a simultaneous transformation to the Si-rich (ͱ3ϫͱ3)R30°reconstruction. On 6H-SiC(0001 ) first signs of hydrogen desorption, i.e., the formation of a dangling bond state in the fundamental band gap of SiC, are seen at temperatures around 670°C while the (1ϫ1) periodicity is conserved. At 950°C a (3ϫ3) reconstruction is formed. The formation of these reconstructions on thermally hydrogenated 6H-SiC (0001) and (0001 ) is discussed in the light of earlier studies of 6H-SiC͕0001͖ surfaces. It will be shown that by using the hydrogenated surfaces as a starting point it is possible to gain insight into how the (ͱ3ϫͱ3)R30°and (3ϫ3) reconstructions are formed on 6H-SiC(0001) and 6H-SiC(0001 ), respectively. This is due to the fact that only hydrogen-terminated 6H-SiC͕0001͖ surfaces possess a surface carbon to silicon ratio of 1:1.

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“…An XPS and lowenergy electron diffraction (LEED) study confirmed that the monocrystals were of crystallographic orientation [0001]. 5,16 Watts' plating bath, i.e. an aqueous solution of 300 g dm…”

Section: Experimental Preparation Of Sic Samplementioning

confidence: 83%

Oxidation of the silicon carbide surface in Watts' plating bath

Socha¹,

Laajalehto²,

Nowak³

2002

Surface & Interface Analysis

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An important problem in metal-matrix composite production by electrochemical co-deposition of SiC particles with nickel is the large variation of the SiC concentration in the composite. One of the possible reasons is the change of SiC surface properties due to its oxidation during contact with the plating bath. X-ray photoelectron spectroscopy was applied to study the surface oxidation of the [0001] basal plane of a-SiC crystals contacted with Watts' plating bath at 55• C. It was shown that the growth of silica at the surface is preceded by the formation of a silicon oxycarbide species (SiO x C y ). The formation of graphite-type carbon at the surface was also observed. The equivalent layer thickness of the main species at the oxidized surface was calculated.

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The (0001)-surface of 6HSiC: morphology, composition and structure

Cited by 116 publications

References 29 publications

Tailoring the SiC Subsurface Stacking by the Chemical Potential

Tailoring the SiC Subsurface Stacking by the Chemical Potential

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

Oxidation of the silicon carbide surface in Watts' plating bath

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