Thallium overlayers on Si(111) studied by scanning tunneling microscopy

Kotlyar, V.G.; Саранин, А. А.; Зотов, А. В.; Kasyanova, T. V.

doi:10.1016/j.susc.2003.08.004

Cited by 33 publications

(27 citation statements)

References 18 publications

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“…2͑b͒ indicate the formation of a surface covered almost entirely with ͑ ͱ 3 ϫ ͱ 3͒ domains, instead of small domains as reported by STM. 15 The formation of a well-defined Tl induced ͑ ͱ 3 ϫ ͱ 3͒ surface was also observed in a recent LEED study. 16 Figure 3 shows Tl 5d core-level spectra obtained at different Tl coverage with a photon energy ͑h ͒ of 50 eV and an emission angle ͑ e ͒ of 0°, i.e., normal emission.…”

Section: Methodssupporting

confidence: 67%

“…In fact, the adsorption of Tl on Si͑111͒-͑7 ϫ 7͒ has been reported to form a ͑1 ϫ 1͒ phase at a coverage of 1 ML. [13][14][15][16][17][18] This phase has not been observed by the adsorption of other group III metals. On the ͑1 ϫ 1͒ surface, Tl atoms are adsorbed on the T 4 sites of the bulk terminated unreconstructed Si͑111͒ surface [16][17][18] as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Together with the well-ordered ͑1 ϫ 1͒ surface, small ͑3 ϫ 1͒ and ͑ ͱ 3 ϫ ͱ 3͒ domains have been observed using scanning tunneling microscopy ͑STM͒ depending on the adsorption conditions. 15 The ͑3 ϫ 1͒ reconstruction is a typical phase formed by monovalent atoms ͑alkali metals or Ag͒ at a coverage of 1 / 3 ML, and the ͑ ͱ 3 ϫ ͱ 3͒ reconstruction is a typical phase formed by the other group III trivalent atoms at a coverage of 1 / 3 ML. Based on the observation of these three phases a variable valency for Tl on a Si͑111͒ surface has been proposed.…”

Section: Introductionmentioning

confidence: 99%

“…Based on the observation of these three phases a variable valency for Tl on a Si͑111͒ surface has been proposed. 15,16 However, so far, there is no investigation on the valence state of Tl on a Si͑111͒ surface, and therefore no strong evidence on the variable valence of Tl.…”

Section: Introductionmentioning

confidence: 99%

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Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

et al. 2006

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, Core-level photoemission study of thallium adsorbed on a Si (111) The coverage-dependent valence state of Tl adsorbed on a Si͑111͒-͑7 ϫ 7͒ surface and the coverage dependence of the charge states of surface Si atoms have been investigated by high-resolution core-level photoelectron spectroscopy. Although two different reconstructions were observed in low-energy electron diffraction at different coverages, a ͑1 ϫ 1͒ pattern at a Tl coverage of 1 monolayer ͑ML͒ and a ͑ ͱ 3 ϫ ͱ 3͒ pattern at a coverage of 1 / 3 ML, the binding energy of the Tl 5d core-level was the same at Tl coverages up to 1 ML. Taking the valence state on a ͑1 ϫ 1͒ surface reported in the literature into account, we conclude that the valence state of Tl is 1+, and that the 6s 2 electrons of Tl are inactive as an inert pair in the Tl-Si bonding on a Si͑111͒ surface at a coverage of 1 ML and below. In the Si 2p core-level spectra, one surface component was observed on the ͑1 ϫ 1͒ surface, and three surface components were observed on the ͑ ͱ 3 ϫ ͱ 3͒ surface. The binding energies and intensities of the Si 2p surface components indicate that the charge state of the surface Si atoms on Tl/ Si͑111͒-͑1 ϫ 1͒ is the same as that of the ͑ ͱ 3 ϫ ͱ 3͒ surfaces induced by the other group III metals, but they are different on the Tl/ Si͑111͒-͑ ͱ 3 ϫ ͱ 3͒ surface.

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Section: Methodssupporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

et al. 2006

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“…The contradiction was resolved by the report that Tl adsorbate displays a variable valency according to the substrate temperature T s ϳ 300°C ͑monovalent below T s and trivalent above T s ͒ at a coverage of about 0.3 monolayers. 17 It is believed that such a characteristic is due to the inert pair of 6s 2 electrons. In the case of Tl SMC on Si͑111͒-7 ϫ 7, individual adatoms could not be resolved in the scanning tunneling microscopy ͑STM͒ image, which seemingly reflects the high mobility of the Tl adatoms within the cluster.…”

Section: Introductionmentioning

confidence: 99%

Ab initiostudy of thallium nanoclusters onSi(111)−7×7

et al. 2007

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We have studied the stability of a thallium nanocluster of various numbers of atoms ͑N =1,2, . . . ,10͒ on a Si͑111͒-7 ϫ 7 substrate using density functional theory total energy calculations. We have compared it with clusters of other group III elements ͑Al, Ga, and In͒. Thallium is found to be unstable with the triangular cluster, which has been known to be stable for other group III elements. Instead, a slightly different structure, in which Si atop atoms are lower than thallium atoms in height by 2.56 Å, was found to be quite stable. Such an abnormal structure originates from the inert pair of 6s 2 electrons due to the significant spin-orbit interaction. The initial relaxed N = 6 Tl cluster continues to grow with increasing N up to N = 9 in the faulted-half unit cell, which is consistent with experimental observations.

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Ab initio study of Tl on Si(111)-(3×1) surface

Özkaya

Çakmak

Alkan

2014

Phys. Status Solidi B

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The surface reconstruction, (3×1), induced by Tl adsorption on a Si(111) surface has been studied using first‐principles density‐functional calculations within the generalized gradient approximation. Three different possible adsorption sites have been considered: 1/3 monolayer (ML) of Tl on the Si(111)‐(3×1) surface with (i) a T4 site (directly above a second‐layer Si atom), (ii) an H3 site (this site is directly above a fourth‐layer Si atom), and 2/3 ML of Tl adsorption on this surface in (iii) a T4–H3 site (one Tl atom on a T4 site and the following one on an H3 site). It is calculated that the T4–H3 site is more favorable than the other two. The stability of the Tl/Si(111)‐(3×1) surface can be related to the amount of the Tl coverage and Si=Si double bond. We also present the electronic band structures for the T4–H3 site as well as the corresponding charge‐density plots.

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Thallium overlayers on Si(111) studied by scanning tunneling microscopy

Cited by 33 publications

References 18 publications

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

Core-level photoemission study of thallium adsorbed on aSi(111)−(7×7)surface: Valence state of thallium and the charge state of surface Si atoms

Ab initiostudy of thallium nanoclusters onSi(111)−7×7

Ab initio study of Tl on Si(111)-(3×1) surface

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