TFT Technology: Advancements and Opportunities for Improvement

Abstract

For flat‐panel display backplane applications, oxide TFT technology has transitioned from a disruptive challenger to a maturing competitor with respect to a‐Si:H and LTPS. Here, we explore the most recent developments and the best options among the offerings.

Active‐matrix mesh electronics thin‐film‐transistor arrays for biometrics‐under‐display and biomedical applications

“…The electrical performance of the monolithic manufacturing process, with respect to TFT performance, defectivity (dominated by nonideal cleanroom conditions and manual handling) as well as uniformity, is essentially identical to the previous reported reference dual‐gate TFT process, 19 demonstrating no deteriorating effect of the monolithic patterning of the substrate. This establishes that active‐matrix mesh electronics a‐IGZO TFT arrays can be integrated in prototype applications as pursued by Holst Centre, as well as in real‐life products manufactured by full‐scale FPD production facilities, grounded on successful (TFT) technology transfers from Holst Centre to industrial FPD partners in the recent past that have resulted in the recognition of Holst Centre as an a‐IGZO TFT development facility 20 …”

“…This establishes that active-matrix mesh electronics a-IGZO TFT arrays can be integrated in prototype applications as pursued by Holst Centre, as well as in real-life products manufactured by full-scale FPD production facilities, grounded on successful (TFT) technology transfers from Holst Centre to industrial FPD partners in the recent past that have resulted in the recognition of Holst Centre as an a-IGZO TFT development facility. 20…”

8‐5: Invited Paper: P‐Type Oxide Semiconductors for Displays: Material Design and Field‐Effect Devices

“…Moreover, pchannel TFTs are indispensable for the development of oxide CMOS technology, offering multiple advantages for displays including lower energy consumption, high packing density, simple circuit architecture, etc. [3]. However, the development of pchannel oxide TFT is currently constrained by the lack of p-type oxide semiconductors with high mobility and proper hole concentrations, compared with their n-type counterparts (a-IGZO, In2O3, ZnO, etc.).…”

Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors

“…[ 1 ] In addition, due to their dominantly n‐type unipolar characteristic, the off‐current levels of oxide TFTs are fairly low enough (<10 −13 A) in the negative gate bias ( V g ) region. [ 2 ] To make the operation of oxide TFTs effective, it is important to reduce the power consumption of unit TFTs. The quantitative measure of power consumption of the TFT is subthreshold swing (SS; V dec −1 ).…”