TFT Small Signal Model and Analysis

Cheng, Xiang; Lee, Sungsik; Nathan, Arokia

doi:10.1109/led.2016.2575924

Cited by 11 publications

(8 citation statements)

References 24 publications

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“…A power-law expression was used for the drift component(in terms of the gate voltage overdrive) and an exponential expression was used for the diffusion component. A small-signal model was developed by means of an equivalent circuit [56].…”

Section: Iii1 Tlc/percolationbased Modelmentioning

confidence: 99%

“…The small signal model for IGZO TFT is illustrated in Fig. 19(a) which takes into account the contact resistance (R S and R D ), parasitic capacitance (C OVS and C OVD ), channel capacitance (C ch ) and threshold voltage shift (ΔV T ) [69], while introducing internal transconductance (g mi ) and output resistance (r oi ) [70]. The model yields a 1% error in predicting the unity gain frequency, in contrast to 12.5% error using the CMOS model as shown in Fig.…”

Section: Small Signal Modelmentioning

confidence: 99%

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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Iñı́guez

Nathan

Kloes

et al. 2021

IEEE J. Electron Devices Soc.

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We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.

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Section: Iii1 Tlc/percolationbased Modelmentioning

confidence: 99%

Section: Small Signal Modelmentioning

confidence: 99%

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Iñı́guez

Nathan

Kloes

et al. 2021

IEEE J. Electron Devices Soc.

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“…Each stage of the RO circuit consists of a diode‐connected transistor as a load resistor and a driver transistor to form an inverter. The RO speed (output frequency) is inversely proportional with both the number of stages and the delay per inverting stage26–28 where the number of stages is optimized to get a clean sine wave. In addition, the delay is inversely proportional to the current consumption.…”

Section: Performance Comparison Between This Work and The State‐of‐thmentioning

confidence: 99%

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Hassan

Hota

Alshammari

et al. 2020

Adv Elect Materials

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Using one binary oxide, a fully transparent thin‐film transistor (TFT)‐based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.

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“…18 [215]. In the subthreshold region, a TFT can also work in a saturated manner (especially when used in amplifier applications such as sensor interfaces).…”

Section: Small Signal Modelmentioning

confidence: 99%

Flexible Ultralow-Power Sensor Interfaces for E-Skin

2019

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Thin-film electronics has hugely benefitted from low-cost processes, large-area processability, and multi-functionality. This has not only stimulated innovation in display and sensor technology, but has also demonstrated great potential for integration of components for human-machine interfaces. For electronics to be deployed as sensor interfaces and signal processing, the quest for low power is compelling due to the inherently limited battery lifetime. This review will present the state-of-the-art in thin film electronics and demonstrate examples of low-cost printable transistors and biosensors that are flexible/stretchable for wearable and other applications. Ultralow power design for thin-film transistors will be discussed from the standpoint of reducing both operating voltage and operating current, taking into account the challenges in meeting frequency requirements. Compact models for circuit design will be reviewed along with new insights into ultralow power transistors and high gain amplifier circuits. Finally, a concept for an integrated system comprising sensors and interfacing circuits will be demonstrated, which has the potential to enable battery-less operation.

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TFT Small Signal Model and Analysis

Cited by 11 publications

References 24 publications

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Flexible Ultralow-Power Sensor Interfaces for E-Skin

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