Tetraazido Complexes of Aluminium, Gallium, and Indium

Sussek, Harald; Stowasser, Frank; Pritzkow, Hans; Fischer, Roland A.

doi:10.1002/(sici)1099-0682(199903)2000:3<455::aid-ejic455>3.0.co;2-e

Cited by 23 publications

(15 citation statements)

References 21 publications

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“…It is known that many isolated or bridged silicon hydroxyls situate on SBA-15 surface. The nucleophility of hydroxyl oxygen atoms determines their facile coordination with the electron-deficient gallium ions of GaCl 3 reagent, thereby facilitating the dissociation of Ga-Cl bond, reducing the chemical potential for the formation of [Ga(N 3 ) 3 ] n adducts [21] and increasing the nucleation density of Ga-N on SBA-15 surface [22].…”

Section: Methodsmentioning

confidence: 93%

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Hydroxyl-promoted synthesis of GaN nanorods on SBA-15 surface

Gai

Chen

Tian

et al. 2006

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 93%

“…A multiple of hydroxyls on SBA-15 surface conduce to the formation of [Ga(N 3 ) 3 ] n film reasonably. At high temperature, the [Ga(N 3 ) 3 ] n film rolls up, accompanying with its decomposition [21,24].…”

Section: Proposed Mechanism For the Formation Of Gan Nanorodsmentioning

confidence: 99%

Hydroxyl-promoted synthesis of GaN nanorods on SBA-15 surface

Gai

Chen

Tian

et al. 2006

Journal of Crystal Growth

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“…Gruppe hat in den letzten Jahren einen groûen Aufschwung erlebt [1]. Eine Ursache ist sicherlich die Suche nach neuen brauchbaren Vorstufen fu È r die MOCVD von AlN, GaN und InN [2,3]. Auf der anderen Seite ist aber auch das pra È parative Interesse an neuen Ring-und Ka È figverbindungen gewachsen, um mehr u È ber deren chemische und physikalische Eigenschaften zu erfahren, wobei eine ganze Palette von Darstellungsvarianten zur Verfu È gung steht [4].…”

Section: Introductionunclassified

“…Wie schon fru È her beobachtet [5,6], ist die N c Hex 2 -Gruppe sterisch so anspruchsvoll, daû z. B. mit dem Zentralmetall Ga nur ein monomeres Galliumamid, Ga(N c Hex 2 ) 3 , aufgebaut werden kann, wa È hrend die N(CH 2 Ph) 2 Aufgrund der niedrigen KZ von drei des In-Atoms sollte in 3 eine kurze In±N-Bindung vorliegen, die mit 204 pm dem In±N-Atomabstand in In[N(SiMe 3 ) 2 ] 3 [18] entspricht. Eine Verla È ngerung auf 207 bzw.…”

Section: Introductionunclassified

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Synthesen von Verbindungen mit M–N‐Bindungen (M = Li, Ga, In)

Pauls

Chitsaz

Neumüller

2001

Z. anorg. allg. Chem.

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Ad memoriam Egon WibergInhaltsu È bersicht. Die Addukte [GaCl 3 (HN i Pr 2 )] (1) und [InCl 3 {HN(CH 2 Ph) 2 } 2 ] (2) ko È nnen aus den Reaktionen des entsprechenden Metalltrihalogenids mit den Aminen gewonnen werden. Das In-Amid In(N c Hex 2 ) 3 (3) entsteht bei der Umsetzung von InCl 3 mit drei Øquivalenten LiN c Hex 2 . Eine Erho È hung auf vier Øquivalente LiN c Hex 2 fu È hrt zum selben Ergebnis. Dagegen wurde bei der Einwirkung von vier Øqui-valenten LiN(CH 2 Ph) 2 auf InCl 3 das gewu È nschte Metallat in Form von [Li(THF) 4 ][In{N(CH 2 Ph) 2 } 4 ] (4) isoliert. Bei der a È hnlichen Reaktion von InCl 3 mit LiN i Pr 2 konnte bisher noch keines der In-haltigen Produkte identifiziert werden. Stattdessen wurde ein Aggregat aus einer Einheit LiCl und drei Einheiten LiN i Pr 2 isoliert und charakterisiert, das [Li 4 (N i Pr 2 ) 3 (THF) 4 Cl] (5). 1±4 wurden mittels NMR-, IRund MS-Spektren charakterisiert. Zusa È tzlich wurde bei allen Produkten eine Ro È ntgenstrukturanalyse durchgefu È hrt. Danach liegen in 1 tetraedrisch koordinierte Metallatome vor, wobei zwei Addukte 1 u È ber Wasserstoffbru È cken-Bindungen zu zentrosymmetrischen Dimeren zusammengelagert sind. Das In-Atom in 2 hat eine trigonal-bipyramidale Koordinationsspha È re; die Aminmoleku È le besetzen die apicalen Positionen. Das In-Atom im Moleku È l 3 hat eine trigonal-planare Umgebung, wa È hrend das Anion [In{N(CH 2 Ph) 2 } 4 ] ± von 4 ein verzerrt tetraedrisch koordiniertes In-Atom entha È lt. Das auffa È llige Strukturelement in 5 ist ein stark verzerrt trigonal-bipyramidales, von Li + -Ionen nur teilweise eingehu È lltes Cl ± -Ion. Der gro È ûte Li±Cl±Li-Winkel betra È gt 165,2(2)°. Syntheses of Compounds with M±N Bonds (M = Li, Ga, In)Abstract. The adducts [GaCl 3 (HN i Pr 2 )](1) and [InCl 3 {HN(CH 2 Ph) 2 } 2 ] (2) can be obtained by the reactions of the corresponding metal(III) halides with the amines. The In amide In(N c Hex 2 ) 3 (3) can be formed by treatment of InCl 3 with three equivalents of LiN c Hex 2 . Reaction with four equivalents of LiN c Hex 2 leads to the same product. However, the treatment of InCl 3 with four equivalents of LiN(CH 2 Ph) 2 gives the desired metalate [Li(THF) 4 ][In{N(CH 2 Ph) 2 } 4 ] (4). From the corresponding reaction of InCl 3 with LiN i Pr 2 no Incontaining product could be identified. Instead, the aggregate of LiCl with three units of LiN i Pr 2 , [Li 4 (N i Pr 2 ) 3 (THF) 4 Cl] (5), was isolated. 1±4 were characterized by NMR, IR and MS techniques as well as by X-ray structure determinations. According to them, 1 possesses a tetrahedrally coordinated Ga atom, at which two units of 1 are connected by hydrogen bridges to centrosymmetrical dimers. The In atoms in 2 have a trigonal-bipyramidal coordination sphere; the amine molecules occupy the apical positions. The central metal atom in 3 and the anion of 4 exhibit trigonal-planar and distorted tetrahedral environments, respectively. The novel structural motif in 5 is the Cl ± ion, only partly surrounded by Li + ions in a strongly distorted trigonal-bipy...

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Indium: Inorganic ChemistryBased in part on the article Indium: Inorganic Chemistry by Dennis G. Tuck which appeared in the Encyclopedia of Inorganic Chemistry, First Edition .

Zhao

Zhang

2005

Encyclopedia of Inorganic Chemistry

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This review highlights the development in inorganic chemistry of indium made in the last ten years. The first parts of this article describe the preparation of new low‐valence indium complexes and organoindium (III) compounds, and the use of these compounds as starting materials for further synthesis. A special highlight is the compounds R 4 In 4 and R 4 In 2 , which show the lively development and the current trends in this field. The following parts present the development of organoindium compounds with group 15 or 16 ligands as single‐source molecular precursors for the deposition of indium‐containing semiconductors by MOCVD; the preparation and characterization of nanoparticles, nanowires, and nanotubes of indium metal, alloys, oxides, and indium‐V/VI semiconductors, which play a sizable role in the new generation of nanoscale electronic and optical devices; and the preparation of new indium intermetallic compounds, which present large structural variety and peculiar magnetic and electrical properties. The last part advances the applications of indium and indium halides in organic synthesis with particular reference to regio‐, stereo‐, and chemoselectivity. These reactions include the regioselective allylation of unsaturated functional groups, the acylation of alcohols and amines, the rearrangement of epoxides, the stereoselective debromination, and other reactions.

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Tetraazido Complexes of Aluminium, Gallium, and Indium

Cited by 23 publications

References 21 publications

Hydroxyl-promoted synthesis of GaN nanorods on SBA-15 surface

Hydroxyl-promoted synthesis of GaN nanorods on SBA-15 surface

Synthesen von Verbindungen mit M–N‐Bindungen (M = Li, Ga, In)

Indium: Inorganic ChemistryBased in part on the article Indium: Inorganic Chemistry by Dennis G. Tuck which appeared in the Encyclopedia of Inorganic Chemistry, First Edition .

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