Testing SRAM-based content addressable memories

Zhao, Jun; Irrinki, S.; Puri, Munish; Lombardi, Fabrizio

doi:10.1109/12.888041

Cited by 35 publications

(3 citation statements)

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“…Most CAM fault models are functional fault models, which are introduced in Refs. [1][2][3][4][5][6], especially focusing on the faults in comparison part. For a CAM structure which has read ports, the faults in the storage part of CAM can be tested by March-like SRAM-based algorithms.…”

Section: Introductionmentioning

confidence: 99%

“…Zhao gives build-in self-test (BIST) algorithms for CAM with both a read port and a write port in Ref. [1]. 10N+2L operations are needed to test concurrent read and comparison operation CAM and 12N+2L operations to test non-concurrent read and comparison operation CAM.…”

Section: Introductionmentioning

confidence: 99%

“…At the same time, PTA1 and PTA3 are also tested in Pass3 and Pass6.After Pass6, the CAM array is flushed to 1. The comparison operation in Pass7 makes a C1 1 for all the CAM cells. Pass8 writes value 0 to all the CAM cells.…”

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confidence: 99%

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Testing content addressable memories with physical fault models

Yang

Zhong

et al. 2009

J. Semicond.

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Content addressable memory (CAM) is widely used and its tests mostly use functional fault models. However, functional fault models cannot describe some physical faults exactly. This paper introduces physical fault models for write-only CAM. Two test algorithms which can cover 100% targeted physical faults are also proposed. The algorithm for a CAM module with N-bit match output signal needs only 2N+2L+4 comparison operations and 5N writing operations, where N is the number of words and L is the word length. The algorithm for a HIT-signal-only CAM module uses 2N+2L+5 comparison operations and 8N writing operations. Compared to previous work, the proposed algorithms can test more physical faults with a few more operations. An experiment on a test chip shows the effectiveness and efficiency of the proposed physical fault models and algorithms.

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