Testbeam and laboratory characterization of CMS 3D pixel sensors

Bubna, M.; Alagöz, E.; Krzywda, A.; Koybasi, O.; Arndt, K.; Bortoletto, D.; Shipsey, I. P. J.; Bolla, G.; Kok, Angela; Hansen, Thor-Erik; Hansen, Thor-Erik; Jensen, Geir Uri; Brom, J. M.; Boscardin, M.; Chramowicz, J.; Cumalat, J. P.; Betta, G.-F. Dalla; Godshalk, A.; Jones, M.; Kröhn, M.; Kumar, Ashish; Lei, C. M.; Moroni, L.; Perera, L.; Povoli, Marco; Prosser, A.; Rivera, R.; Solano, A.; Obertino, M. M.; Kwan, S.; Uplegger, L.; Viá, C. Da; Vigani, L.; Wagner, S. R.

doi:10.1088/1748-0221/9/07/c07019

Cited by 3 publications

(4 citation statements)

References 15 publications

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“…Reference [8] shows that after irradiation the SINTEF sensors have a noise of ∼450 e − , while the FBK ATLAS08 batch 2E and 4E have ∼280 e − and ∼350 e − respectively. The hit efficiency is comparable between the SINTEF and FBK ATLAS08 2E (∼90%), while the FBK ATLAS08 4E has a lower efficiency, ∼80% [8]. Further tests are under way in order to determine the best company and design.…”

Section: D Silicon Sensorsmentioning

confidence: 99%

“…Best performance are given by the FBK AT-LAS08 4E and the SINTEF 2E. Reference [8] shows that after irradiation the SINTEF sensors have a noise of ∼450 e − , while the FBK ATLAS08 batch 2E and 4E have ∼280 e − and ∼350 e − respectively. The hit efficiency is comparable between the SINTEF and FBK ATLAS08 2E (∼90%), while the FBK ATLAS08 4E has a lower efficiency, ∼80% [8].…”

Section: D Silicon Sensorsmentioning

confidence: 99%

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The pixel detector for the CMS phase-II upgrade

Dinardo

2015

J. Inst.

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The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb −1 , that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2×10 16 1MeV eq.n. / cm 2 , or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article. ABSTRACT: The high luminosity phase of the Large Hadron Collider (HL-LHC) requires a major pixel detector R&D effort to develop both readout chip and sensor that are capable to withstand unprecedented extremely high radiation. The target integrated luminosity of 3000 fb −1 , that the HL-LHC is expected to deliver over about 10 years of operation, translates into a hadron fluence of 2 × 10 16 1MeV eq.n. / cm 2 , or equivalently 10 MGy of radiation dose in silicon, at about 3 cm from the interaction region where the first layer of the pixel detector could be located. The CMS collaboration has undertaken two baseline sensor R&D programs on thin n-on-p planar and 3D silicon sensor technologies. Together with the ATLAS collaboration it has also been established a common R&D effort for the development of the readout chip in the 65 nm CMOS technology. Status, progresses, and prospects of the CMS R&D effort are presented and discussed in this article.

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Section: D Silicon Sensorsmentioning

confidence: 99%

Section: D Silicon Sensorsmentioning

confidence: 99%

The pixel detector for the CMS phase-II upgrade

Dinardo

2015

J. Inst.

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“…The detector hardware and control software is complemented by the Monicelli software, which provides to the users the reconstructed tracks necessary for their data analysis. The telescope has already been used by several experiments and, in particular, has been extensively used by the CMS forward pixel community to test sensor candidates for future CMS pixel upgrades [7][8][9][10][11][12][13][14][15].…”

Section: Discussionmentioning

confidence: 99%

The pixel tracking telescope at the Fermilab Test Beam Facility

Kwan

Lei

Menasce

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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An all silicon pixel telescope has been assembled and used at the Fermilab Test Beam Facility (FTBF) since 2009 to provide precise tracking information for different test beam experiments with a wide range of Detectors Under Test (DUTs) requiring high resolution measurement of the track impact point. The telescope is based on CMS pixel modules left over from the CMS forward pixel production. Eight planes are arranged to achieve a resolution of less than 8 μm on the 120 GeV proton beam transverse coordinate at the DUT position. In order to achieve such resolution with 100  150 μm 2 pixel cells, the planes were tilted to 25 degrees to maximize charge sharing between pixels. Crucial for obtaining this performance is the alignment software, called Monicelli, specifically designed and optimized for this system. This paper will describe the telescope hardware, the data acquisition system and the alignment software constituting this particle tracking system for test beam users.

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“…The innermost layers of the pixel detector will be exposed to a fluence of about 10 16 n eq /cm 2 during the operation of HL-LHC. A variety of pixel technologies (3D [3], diamond [4], and Epitaxial silicon [5]) are being explored for the HL-LHC upgrade of CMS experiment. These technologies offer improved radiation hardness, but many of them are expensive and difficult to produce compared to traditional planar sensors.…”

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confidence: 99%

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

et al. 2015

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The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm −2 s −1 and collect ∼ 3000fb −1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq /cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 µm to 320 µm in p-and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) have been studied. The results for electrical characterization, charge collection efficiency, and position resolution of various n-in-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.

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Testbeam and laboratory characterization of CMS 3D pixel sensors

Cited by 3 publications

References 15 publications

The pixel detector for the CMS phase-II upgrade

The pixel detector for the CMS phase-II upgrade

The pixel tracking telescope at the Fermilab Test Beam Facility

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

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