Test object of the linewidth with a trapezoidal profile and three certified sizes for an SEM and AFM

Gavrilenko, V. P.; Mityukhlyaev, V. B.; Novikov, Yu. A.; Ozerin, Yu. V.; Rakov, A. V.; Todua, P. A.

doi:10.1088/0957-0233/20/8/084022

Cited by 25 publications

(20 citation statements)

References 9 publications

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“…The investigated test objects were silicon structures (protrusions and grooves) with a trapezoidal profile and large side wall slopes that satisfy condition (10). The test objects were prepared by anisotropic etching of silicon with the (100) surface orientation.…”

Section: Investigated Samplesmentioning

confidence: 99%

“…, At the first experimental stage, we used a test object with protrusions of three certified sizes [10]. The structure (Fig.…”

Section: Investigated Samplesmentioning

confidence: 99%

“…For high and low voltage SEMs, the methods for measuring the electron probe diameter were developed [5,6], in which test objects with a trapezoidal profile and large slopes of side walls of relief elements are used [7][8][9][10][11][12]. These methods were brought up to the formu lation of the Russian State Standards [13,14] (GOST R) for test objects and application in scanning electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

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Electron distribution density in a low voltage SEM probe

Novikov

2014

Russ Microelectron

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Section: Investigated Samplesmentioning

confidence: 99%

“…, At the first experimental stage, we used a test object with protrusions of three certified sizes [10]. The structure (Fig.…”

Section: Investigated Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electron distribution density in a low voltage SEM probe

Novikov

2014

Russ Microelectron

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“…Several CD reference materials or standards have been developed [13][14][15][16][17][18][19][20][21][22]. Many of them are made of crystal silicon [13][14][15][16][17][18][19], and some are made of CoG (Chrome-on-glass) or MoSi (molybdenum silicide) usually applied as reference photomask line width standards [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Development and characterisation of a new line width reference material

Dai

Zhu

Heidelmann

et al. 2015

Meas. Sci. Technol.

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A new critical dimension (CD, often synonymously used for line width) reference material with improved vertical parallel sidewalls (IVPSs) has been developed and characterised. The sample has a size of 6 mm × 6 mm, consisting of 4 groups of 5 × 5 feature patterns. Each feature pattern has a group of five reference line features with a nominal CD of 50 nm, 70 nm, 90 nm, 110 nm and 130 nm, respectively. Each feature pattern includes a pair of triangular alignment marks, applicable for precisely identifying the target measurement position, e.g. for comparison or calibration between different tools. The geometry of line features has been investigated thoroughly using a high-resolution transmission electron microscope and a CD atomic force microscope (CD-AFM). Their results indicate the high quality of the line features: the top corner radius of <7 nm, vertical sidewall (slope mostly within 90° ± 0.5°) and very small line width variation (LWR down to 0.36 nm). The application of the developed sample for calibrating the scaling factor and effective tip geometry of the CD-AFM are demonstrated. The scaling factor of the CD-AFM is calibrated to be 0.9988, coinciding well with the theoretical value 1 as the tool was calibrated to a traceable metrological atomic force microscope. The effective width of a CDR120-EBD tip is calibrated as 128.32 nm. Finally, a strategy for the non-destructive calibration of the developed sample is introduced, which enables the application of the reference material in practice.

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“…In this work we used silicon stepping relief structures (as described in [3]) as test objects consisting of a set of elements (protrusions) with a trapezoidal profile and 2.0 μm step size; the width of the upper base was about 10 nm, height about 500 nm. Such structures were made by anisotropic etching of monocrystalline silicon doped with phosphorus up to the level of 1·10 15 cm -3 .…”

Section: Introductionmentioning

confidence: 99%

Natural oxide thickness measurements on the test silicon relief pitch structure

et al. 2013

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The study was performed on a test step relief structure of monocrystalline silicon. There was experimentally measured the thickness of the natural oxide on this structure consisting of a set of elements (protrusions) with a trapezoidal profile and 2.0 μm step size, upper base about 10 nm, height about 500 nm. The tilt angle of side face with respect to the lower base was 54.7°. The entire structure was covered with a natural oxide film that appeared at room temperature, the thickness of which is being measured using a transmission electron microscope with atomic resolution by the observed pattern in the direct mode resolution of the crystal structure. In order to calibrate the measurements a distance between {111} planes was used. It was shown experimentally, that in the area of this bottom the natural oxide thickness increases from 2.3 ± 0.2 nm in the middle of the bottom to 3.0 ± 0.2 nm and 4.5 ± 0.2 nm at the left and right edges of the bottom, respectively.

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Test object of the linewidth with a trapezoidal profile and three certified sizes for an SEM and AFM

Cited by 25 publications

References 9 publications

Electron distribution density in a low voltage SEM probe

Electron distribution density in a low voltage SEM probe

Development and characterisation of a new line width reference material

Natural oxide thickness measurements on the test silicon relief pitch structure

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