Test-beam characterisation of the CLICTD technology demonstrator - A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement

Ballabriga, R.; Buschmann, E.; Campbell, M.; Dannheim, D.; Dort, K.; Egidos, N.; Huth, Lennart; Kremastiotis, I.; Kröger, Jens; Linssen, L.; Llopart, X.; Münker, Magdalena; Nürnberg, A.; Snoeys, W.; Spannagel, S.; Vǎnát, T.; Vicente, M. C.; Williams, M.C.S.

doi:10.1016/j.nima.2021.165396

Cited by 6 publications

(22 citation statements)

References 17 publications

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“…The output of the eight sub-pixels are combined by an OR gate in a common digital front-end of the detection channel, allowing for a reduction of the digital logic. The CLICTD sensor features simultaneous 8-bit Time-of-Arrival (ToA) (10 ns ToA bins) and 5-bit Timeover-Threshold (ToT) measurement capabilities, although these are not studied in this paper (see [9] for further details).…”

Section: Sensor Designmentioning

confidence: 99%

“…In the following sections the transient Monte Carlo simulation using electrostatic TCAD fields and Allpix 2 is compared to data recorded with the CLICTD prototype in test-beam measurements. This section summarises the reconstruction and analysis techniques, while a detailed description of the setup and reconstruction is given elsewhere both for the test-beam measurements [9] and for the simulations [2].…”

Section: Reconstruction and Analysismentioning

confidence: 99%

“…Systematic Uncertainties. The detection threshold applied to the sensor has a considerable impact on the cluster observables and has been calibrated in laboratory measurements [9]. The calibration yields a statistical uncertainty of ±0.02 e − /threshold DAC step and a systematic uncertainty of +2.2 −3.0 e − /threshold DAC step.…”

Section: Test-beam Measurementsmentioning

confidence: 99%

See 2 more Smart Citations

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Ballabriga,

Braach,

Buschmann

et al. 2022

Preprint

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An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective for the optimisation and characterisation of silicon sensors.In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix 2 framework are presented for a monolithic CMOS pixel sensor with a small collection electrode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.

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Section: Sensor Designmentioning

confidence: 99%

Section: Reconstruction and Analysismentioning

confidence: 99%

Section: Test-beam Measurementsmentioning

confidence: 99%

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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Ballabriga,

Braach,

Buschmann

et al. 2022

Preprint

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show abstract

“…The following section gives a brief overview of the main features of the CLICTD sensor. Additional details can be found in [5] and [9].…”

Section: The Clictd Sensormentioning

confidence: 99%

“…Monolithic sensor designs featuring a small collection electrode benefit from a reduced capacitance, which enables an improvement in signal-to-noise ratio and reduced power consumption [1]. Several sensors have been fabricated in a modified 180 nm CMOS imaging process implementing the small collection-electrode design with a 25 -30 µm highresistivity epitaxial layer on a low-resistivity substrate, such as the ALPIDE [2], (Mini-)MALTA [3], FASTPix [4] and CLICTD [5] sensors. They have exhibited promising results regarding radiation tolerance, a time resolution down to hundreds of picoseconds, a spatial resolution of a few micrometers and full efficiency over a wide threshold range.…”

Section: Introductionmentioning

confidence: 99%

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Dort,

Ballabriga,

Braach

et al. 2022

Preprint

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Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

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Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

Ballabriga

Braach

Buschmann

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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Test-beam characterisation of the CLICTD technology demonstrator - A small collection electrode high-resistivity CMOS pixel sensor with simultaneous time and energy measurement

Cited by 6 publications

References 17 publications

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

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