Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

Ballabriga, R.; Braach, Justus; Buschmann, E.; Campbell, M.; Dannheim, D.; Dort, K.; Huth, Lennart; Kremastiotis, I.; Kröger, Jens; Linssen, L.; Münker, Magdalena; Schütze, P.; Snoeys, W.; Spannagel, S.; Vǎnát, T.

doi:10.1016/j.nima.2022.166491

Cited by 6 publications

(7 citation statements)

References 28 publications

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“…The fit results for both pixel flavours are summarised in Table 3. For all sensor types, the estimated active depth of about 30 μm is larger than the depletion depth of 21 ± 1 μm expected from simulation studies [28]. A non-negligible contribution of charge carriers from the undepleted region is possible, since there is still a residual electric field below the depletion line.…”

Section: Determination Of Active Sensor Depthmentioning

confidence: 62%

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Dort

Ballabriga

Braach

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Determination Of Active Sensor Depthmentioning

confidence: 62%

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Dort

Ballabriga

Braach

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

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“…The fit results for both pixel flavours are summarised in Table 3. For all sensor types, the estimated active depth of about 30 µm is larger than the depletion depth of 21±1 µm expected from simulation studies [27]. A non-negligible contribution of charge carriers from the undepleted region is possible, since there is still a residual electric field below the depletion line.…”

Section: Determination Of Active Sensor Depthmentioning

confidence: 62%

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Dort,

Ballabriga,

Braach

et al. 2022

Preprint

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Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

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“…Together TCAD and Allpix 2 are a powerful combination, making it possible to simulate detailed sensor behaviour and performance with high statistics. This has previously been tested and validated for other MAPS with small collection electrodes [10,11].…”

Section: Simulation Studiesmentioning

confidence: 99%

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

Wennlöf

Chauhan

Eckstein

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

Cited by 6 publications

References 28 publications

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

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