Terrestrial neutron-induced single-event burnout in SiC power diodes

Asai, Hideki; Sugimoto,; Nashiyama,; Iide,; Shiba,; Matsuda,; Miyazaki,

doi:10.1109/radecs.2011.6131401

Cited by 14 publications

(4 citation statements)

References 12 publications

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“…For this reason space agencies are cautious in implementing SiC devices in their space systems [4], [5]. Also at ground level, SiC power devices can exhibit radiation-induced failures due to cosmic rays [10], [11].…”

mentioning

confidence: 99%

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen

Galloway

Ferlet-Cavrois

et al. 2016

IEEE Trans. Device Mater. Relib.

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Abstract-Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.

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mentioning

confidence: 99%

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen

Galloway

Ferlet-Cavrois

et al. 2016

IEEE Trans. Device Mater. Relib.

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“…The number of particles above 40 MeV-cm 2 /mg is very small in outer space compared to that of particles below 40 MeV-cm 2 /mg. Secondary ions generated by a neutron hit with Si is mainly less than 18 MeV-cm 2 /mg which is close to LET of Ar [29]. The measurement procedure is as below.…”

Section: Heavy-ion Irradiation Testmentioning

confidence: 79%

Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies

NAKAJIMA,

ITO,

SUGITANI

et al. 2024

IEICE Trans. Electron.

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We evaluated soft-error tolerance by heavy-ion irradiation test on three-types of flip-flops (FFs) named the standard FF (STDFF), the dual feedback recovery FF (DFRFF), and the DFRFF with long delay (DFRFFLD) in 22 and 65 nm fully-depleted silicon on insulator (FD-SOI) technologies. The guard-gate (GG) structure in DFRFF mitigates soft errors. A single event transient (SET) pulse is removed by the C-element with the signal delayed by the GG structure. DFRFFLD increases the GG delay by adding two more inverters as delay elements. We investigated the effectiveness of the GG structure in 22 and 65 nm. In 22 nm, Kr (40.3 MeV-cm 2 /mg) and Xe (67.2 MeV-cm 2 /mg) irradiation tests revealed that DFRFFLD has sufficient soft-error tolerance in outer space. In 65 nm, the relationship between GG delay and CS reveals the GG delay time which no error was observed under Kr irradiation.

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“…This is particularly important in reliability studies and when trying to predict the survival of these systems in space. Finally, much work had been done by the authors and others which include experimental and/or theoretical data on temperature and radiation effects in semiconductors [3][4][5][6][7][8]. So, the present paper is a trial to shed further light on such very interest and important field.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Dependence of Power Diode on Temperature and Radiation

El‐Ghanam

El-Maksood

Soliman

2015

IJPEDS

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A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2015" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction. The model was analyzed under the influence of different radiation type (gammarays, neutrons, protons and electrons) with various dose levels and energies. The carrier's diffusion lengths were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.

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Terrestrial neutron-induced single-event burnout in SiC power diodes

Cited by 14 publications

References 12 publications

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies

Modeling the Dependence of Power Diode on Temperature and Radiation

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