Ternary SiGeC alloys: growth and properties of a new semiconducting material

Osten, H. J.; Kim, Myeongcheol; Lippert, G.; Zaumseil, P.

doi:10.1016/s0040-6090(96)09250-4

Cited by 24 publications

(14 citation statements)

References 23 publications

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“…Based on these results, a prediction of the band structure was formulated, as shown schematically in Figure 20, and is compared with the corresponding structure of compressively strained Si 1-x Ge x . 62 The fundamental gap is reduced and the main offset occurs in the conduction band, whereas the reduction in the Si 1-x Ge x system occurs in the valence band. This feature is expected to have important implications for heterostructure engineering.…”

Section: Influence Of Carbon On Band Structurementioning

confidence: 99%

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

1998

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The synthesis and characterization of completely novel binary and ternary alloy semiconductors and ordered phases based on C, Si, and Ge are discussed in this review. Metastable compound semiconductors with ordered structures, which include stoichiometric SiGe, Si 4 C, Si 3 GeC 4 (sphalerite), Ge 4 C, (Si 2 Ge)C x , and (Ge 2 Si)C x (x ) 5%), are described. Materials systems include diamond-structured silicon-germanium solid solutions with dissolved carbon (Si 1-x-y Ge x C y ), monocrystalline Ge 1-x C x hybrids of Ge, and C-diamond and related Si-containing random alloy systems. The Si 4 C and Ge 4 C materials incorporate the corresponding tetrahedra that are linked together to form a diamond-cubic structure related to Si. The Si 3 GeC 4 phase is related to sphalerite and (Si 2 Ge)C x has a new P3 hm1 structure formed by Ge-Si-Si ordering along the diamond 〈111〉 direction. These compounds offer the prospect of band gaps wider than that of Si; in some cases, the band gaps are expected to become direct. This report emphasizes an approach that combines novel precursor chemistries and modern deposition techniques (ultrahigh-vacuum chemical-vapor deposition) to develop heteroepitaxial, device-quality inorganic materials. Important highlights of recent research based on conventional deposition methods are also summarized.

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Section: Influence Of Carbon On Band Structurementioning

confidence: 99%

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

1998

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“…1 Recently, it was shown that the addition of carbon into SiGe layers can provide a way to mitigate these two problems. 2 The addition of a few percent of carbon can relieve strain and thus increase the critical thickness and thermal stability. 3 The growth of metastable Si 1ϪxϪy Ge x C y alloys as well as their structural and mechanical properties have been widely investigated.…”

Section: Introductionmentioning

confidence: 99%

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)

Osten

1998

Journal of Applied Physics

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An estimation for the band offsets and the fundamental band gap will be presented for Si1−x−yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1−yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1−x−yGexCy. For a completely strain-compensated (cubic) Si1−x−yGexCy layer, we predict significant “Ge effects” (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.

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“…Recently, it was shown that the incorporation of carbon into the substitutional sites could overcome some of the limitations. 3,[7][8][9][10][11] Ion implantation and solid phase epitaxy (SPE) have been used successfully to incorporate carbon into the substitutional sites. However, due to the low solubility of carbon in Si, β-SiC can be formed during epitaxial regrowth.…”

Section: Introductionmentioning

confidence: 99%

The Loss Kinetics of Substitutional Carbon in Si_1-xC_x Regrown by Solid Phase Epitaxy

Kim

et al. 2001

Jpn. J. Appl. Phys.

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Epitaxial layers of Si 1−x C x (x = 0.016) were synthesized using ion implantation and solid phase epitaxy (SPE), and the loss kinetics of substitutional carbon was investigated. As annealing temperature and time increase, more carbon atoms were found to diffuse from substitutional to interstitial sites. The activation energy for the loss of substitutional carbon into interstitial sites was obtained over the temperature range, 700-1040 • C, using both high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared spectroscopy (FTIR). Both methods yielded similar activation energies (∼3 eV) for the loss kinetics. In addition, SPE layers regrown by rapid thermal annealing (RTA) were shown to have better crystalline quality than those regrown by furnace annealing.

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Ternary SiGeC alloys: growth and properties of a new semiconducting material

Cited by 24 publications

References 23 publications

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)

The Loss Kinetics of Substitutional Carbon in Si_1-xC_x Regrown by Solid Phase Epitaxy

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Ternary SiGeC alloys: growth and properties of a new semiconducting material

Cited by 24 publications

References 23 publications

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)

The Loss Kinetics of Substitutional Carbon in Si1-xCx Regrown by Solid Phase Epitaxy

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The Loss Kinetics of Substitutional Carbon in Si_1-xC_x Regrown by Solid Phase Epitaxy