The Loss Kinetics of Substitutional Carbon in Si<sub>1-x</sub>C<sub>x</sub> Regrown by Solid Phase Epitaxy

Kim, Yong Jeong; Kim, Tae‐Joon; Kim, Tae‐Kyung; Park, Byungwoo; Song, Jee-Hun

doi:10.1143/jjap.40.773

Cited by 9 publications

(5 citation statements)

References 22 publications

(27 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From previous studies, it was concluded that the major pathways for strain relaxation are (i) kick-out of C sub from substitutional sites with a transition from intermediate Si-C complexes formation to eventual precipitation of b-SiC over 900 C, 20,21 or (ii) formation of dislocation under thermal treatment over 1000 C. 17 In above cases, loss of C sub is the main fingerprint for strain relaxation, and FTIR has been proven to be a suitable tool for identifying C sub loss by measuring the peak intensity of LVM around 607 cm À1 . 22 As shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

View full text Add to dashboard Cite

Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below b-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further b-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 Â 10 14 atom/cm 2 ) for the retention of strain stability in phosphorus doped Si:C. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

Section: Resultsmentioning

confidence: 99%

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Using a lower temperature iRTP anneal (around 1000 o C) can reduce the loss of carbon from the substitutional site. As annealing temperature and time increases more carbon is found to diffuse from substitutional sites to interstitial sites (8). .…”

Section: Resultsmentioning

confidence: 99%

(Invited) Strained Si:C Using ClusterCarbon Implant

Sekar¹,

Krull²

2010

ECS Trans.

View full text Add to dashboard Cite

We discuss the use of ClusterCarbon implant to obtain Si:C stressor layers for strain engineering applications in advanced technology nodes. ClusterCarbon implant with its self-amorphizing capability is exploited to achieve both an abrupt and shallow junction for Phos profiles. Various carbon implant conditions are being experimented for a given phosphorus implant dose under flash and spike anneal conditions. We discuss the results to address the trade-off between phosphorus activation and carbon substitution along with the junction depth and abruptness. An optimum anneal and carbon implant condition is required to achieve higher carbon substitution along with a reasonably low sheet resistance value.

show abstract

“…Although fRTP effectively activates implanted phosphorus, it also results in significant loss of substitutional C. iRTP anneal at lower temperature (around 1000 o C) can reduce the loss of substitunal C. As annealing temperature and time are increased, increase of C diffusion from substitutional sites to interstitial sites has been reported. [12,13] ECS Transactions, 75 (8)…”

Section: High Resolution X-ray Diffractionmentioning

confidence: 99%

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

Yoo¹,

Kang²,

Nishigaki

et al. 2016

ECS Trans.

View full text Add to dashboard Cite

Phosphorous ion clusters (P4 +) (8 keV, 4x1015 cm-2) were implanted with carbon ion clusters (C7) targeting 1.30 at.% and 1.50 at. % flat C profile (~50 nm from the surface) for NMOS device performance enhancement by tensile strain generation. Flash anneal (fRTP) at 1200oC and impulse spike anneal (iRTP) at 1000oC and 1050oC were used as annealing conditions. Micro-Raman characterization of cluster C-implanted Si was done before and after various rapid thermal annealing (RTA) techniques and conditions under various excitation wavelengths for virtual depth profiling of Si stress. As-implanted Si wafers showed almost no Raman signal due to the crystalline lattice damage from high dose cluster ion beam implantation. After RTA of the implanted Si wafers under different techniques and conditions, significant broadening and shift of Raman peaks, towards the lower wavenumber side, was measured, indicating the presence of tensile strain and crystallinity alterations. High resolution X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) depth profiling and sheet resistance measurement results were compared with multiwavelength micro-Raman characterization results.

show abstract

The Loss Kinetics of Substitutional Carbon in Si_1-xC_x Regrown by Solid Phase Epitaxy

Cited by 9 publications

References 22 publications

On the doping limit for strain stability retention in phosphorus doped Si:C

On the doping limit for strain stability retention in phosphorus doped Si:C

(Invited) Strained Si:C Using ClusterCarbon Implant

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

Contact Info

Product

Resources

About

The Loss Kinetics of Substitutional Carbon in Si1-xCx Regrown by Solid Phase Epitaxy

Cited by 9 publications

References 22 publications

On the doping limit for strain stability retention in phosphorus doped Si:C

On the doping limit for strain stability retention in phosphorus doped Si:C

(Invited) Strained Si:C Using ClusterCarbon Implant

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

Contact Info

Product

Resources

About

The Loss Kinetics of Substitutional Carbon in Si_1-xC_x Regrown by Solid Phase Epitaxy