Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems

Kabir, N.; Yoon, Young-Joong; Knab, Joseph R.; Chen, J. Y.; Markelz, Andrea; Reno, John L.; Sadofyev, Yu. G.; Johnson, Shane; Zhang, Yong-Hang; Bird, J. P.

doi:10.1063/1.2357605

Cited by 20 publications

(10 citation statements)

References 17 publications

(15 reference statements)

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“…(Color online) the relative transmission amplitude of monolayer MoS 2 , and compared with the experimental results of (a) GaAs 2DEG, and (b) InAs 2DEG [39] under different carrier concentrations.Under actual conditions, the transparent electrode normally remains on the surface of the base. We studied the effect of monolayer MoS 2 on the transmission of samples when it is on the base surface and compared it with the existing experimental results for 2DEG[39]. Thus, the relative transmission amplitude can be defined as t rt = 1 + n sub + Z 0 σ s .…”

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Broadband ultra-high transmission of terahertz radiation through monolayer MoS2

Deng

et al. 2015

Journal of Applied Physics

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In this study, terahertz (THz) absorption and transmission of monolayer MoS 2 was calculated under different carrier concentrations. Results showed that the THz absorption of monolayer MoS 2 is very small even under high carrier concentrations and large incident angle. Equivalent loss of the THz absorption is the total sum of reflection and absorption that is one to three grades lower than that of graphene.The monolayer MoS 2 transmission is much larger than that of the traditional GaAs and InAs two-dimensional electron gas. The fieldeffect tubular structure formed by the monolayer MoS 2 -insulationlayer-graphene is investigated. In this structure the THz absorption of graphene to reach saturation under low voltage. Meantime, the maximum THz absorption of monolayer MoS 2 was limited to approximately 5%. Thus, monolayer MoS 2 is a kind of ideal THz Transparent Electrodes. 1 Transparent electrode has important prospective applications in the fields of photodetectors, light-emitting diodes (LEDs), vertical cavity surface emitting lasers (VCSELs), and solar cells, et al [1, 2]. As a novel two-dimensional (2-D) material, graphene has high conductivity and very high light transmission within the range of medium infrared and visible light frequency [2-4].Thus, it is regarded as an ideal transparent electrode material. However, the plasmon of graphene exhibits very high terahertz (THz) absorption when the carrier concentration of graphene is high within the THz or far-infrared frequency range [5][6][7][8][9][10][11][12][13][14]. Therefore, graphene with high carrier concentration in THz frequency range is regarded as an absorption medium instead of a transparent electrode.The frequency of the THz range is mainly the spectrum within 0.1-10 THz. Given its special properties, the spectrum of the THz range has broad applications in communication, medical imaging, radar detection, nondestructive tests, and so on [15,16]. The transparent electrode within the THz frequency range has important prospective applications in THz detectors, modulators, VCSELs, and phase shifters [5][6][7][15][16][17][18][19][20][21][22]. Numerous THz transparent electrodes have been suggested, including two-dimensional electron gas (2DEG), ion-gel, two-dimensional arrays of metallic square holes, graphene with low carrier density, and indium-tin-oxide (ITO) nanomaterials. However, Broadband ultra high transmission THz transparent electrodes is still very desirable.Recently, another 2-D material, namely, monolayer MoS 2 , has attracted much research attention. monolayer MoS 2 has high mobility (∼410 cm 2 V −1 s −1 ) and excellent mechanical properties [23][24][25][26][27][28][29][30][31][32][33][34]. However, its optical property is not the same as that of graphene. The monolayer MoS 2 band gap is not zero, which has a high absorption within the visible-light frequency range.This material can be used as a high-efficiency photoelectric detector material instead of an ideal transparent electrode material within the visible light frequency [23-31, 35, 36...

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Broadband ultra-high transmission of terahertz radiation through monolayer MoS2

Deng

et al. 2015

Journal of Applied Physics

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“…Inelastic interactions also restrict the lifetime but at low temperatures T ∼ 1 K close to the Fermi surface the impurity scattering poses the most stringent condition for the driving frequency. Typically in GaAs and related InGaAs and InAs 2DEGs τ ∼ 0.1 − 1 × 10 −12 s [17][18][19] so the frequency should be Ω/2π 1−10 THz to observe the field-induced band renormalization.…”

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Photoinduced helical metal and magnetization in two-dimensional electron systems with spin-orbit coupling

Ojanen

Kitagawa

2012

Phys. Rev. B

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Helical metals realized at the surfaces of topological insulators have recently attracted wide attention due to their potential applications in spintronics. In this paper we propose to realize helical metals through the application of THz light on common two-dimensional semiconductors and discuss their observable properties. We show that the application of circularly polarized light enables coherent manipulation of magnetization. Moreover, for a range of chemical potentials the system behaves as a helical metal, exhibiting a large anomalous Hall conductivity and associated magnetoelectric effect. Proposed dynamical engineering of material properties through light in much-studied materials opens new perspectives for future applications.

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“…In our case, we should expect the electron relaxation time of about 10 -11 s and scattering mean free path of about 50 μm. For this relaxation time, the QW structure provides a strong interaction with THz radiation by the free-carrier Drude absorption mechanism [44] in the frequency range of 100-700 GHz. The high conductivity of degenerate electron gas on the metal type structure provides resistance to the order of a few tens of ohms, which will ensure a good matching with the planar metallic antenna.…”

Section: Results For Electron Mobility In Cdte/hg 1-x CD X Te/cdte Qumentioning

confidence: 99%

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe

Melezhik¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Electron relaxation processes at nitrogen temperatures in CdTe/Hg 1-x Cd x Te/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, acoustic phonons and interfaces were taken into account. It was found that for undoped and lightly doped QWs (concentration of background n-type charged impurities in the well is 10 14 -10 16 cm -3 or less), for x close to the band inversion value 0.16, the electron mobility grows considerably when the QW width decreases. This mobility is higher for samples with smaller concentrations of charged impurities.

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Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems

Cited by 20 publications

References 17 publications

Broadband ultra-high transmission of terahertz radiation through monolayer MoS2

Broadband ultra-high transmission of terahertz radiation through monolayer MoS2

Photoinduced helical metal and magnetization in two-dimensional electron systems with spin-orbit coupling

Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1-xCdxTe/CdTe

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