2009
DOI: 10.1063/1.3159032
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Terahertz spectroscopy of plasma waves in high electron mobility transistors

Abstract: We report on systematic measurements of resonant plasma waves oscillations in several gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with numerical results from a specially developed model. A great concern of experiments has been to ensure that HEMTs were not subject to any spurious electronic oscillation that may interfere with the desired plasma-wave spectroscopy excited via a terahertz optical beating. The influence of geometrical HEMTs parameters as well as biasing condition… Show more

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Cited by 47 publications
(32 citation statements)
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“…1) repeats essentially that described in detail in Ref. [8]. Additionally, the new setup includes: (i) the system of THz emission detection, and (ii) the sample cooling system.…”
Section: Experimental Configurationmentioning
confidence: 95%
“…1) repeats essentially that described in detail in Ref. [8]. Additionally, the new setup includes: (i) the system of THz emission detection, and (ii) the sample cooling system.…”
Section: Experimental Configurationmentioning
confidence: 95%
“…[2] and references therein). Figure 4 illustrates a frequency behavior of the drain--voltage response at the zeroth and first harmonics, U 0 and U 1 , respectively, as functions of the beating frequency of photoexcitation.…”
Section: Detection Of Thz Signalmentioning
confidence: 99%
“…On the other hand, the excitation of 2D plasma waves can be used for THz signal detection which was recently observed experimentally in sub-and near--THz regions (see, e.g. [2] and references therein). Of course, for the analysis of the conditions favourable to realize these effects the knowlegde of the small-signal admittance and impedance of FET/HEMT structures interesting for THz applications is of great importance.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Up to now, investigations of eigen 2D plasma waves were carried out mainly in the following directions: (i) experimental investigation of the voltage-tunable spectral behaviour of THz radiation emission from FETs/HEMTs (see, e. g. [2,3] and references therein); (ii) theoretical investigation of spectral behaviour of electronic noise in FET/ HEMT channels [2,4,5]; and (iii) experimental and theoretical investigation of both THz radiation resonant detection and THz re-emission at the beating frequency of two-laser excitation (see, e. g. [6] and references therein).…”
Section: Introductionmentioning
confidence: 99%