Terahertz sensing with a carbon nanotube/two-dimensional electron gas hybrid transistor

Kawano, Yukio; Uchida, Takao; Ishibashi, Koji

doi:10.1063/1.3205125

Cited by 44 publications

(13 citation statements)

References 19 publications

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“…It is due to detection mechanism, where one−photon absorption generates only one electron even if quantum efficiency of 100% is assumed. To resolve this problem, a carbon nano− tube (CNT) single−electron transistor (SET) integrated with a GaAs/AlGaAs heterostructure chip having a two−dimen− sional electron gas (2DEG) has been proposed [286]. In this hybrid structure, THz absorption takes place in the 2DEG but signal readout in the CNT−SET (see Fig.…”

Section: Novel Thz Detectorsmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Novel Thz Detectorsmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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“…Nanomaterials exhibiting direction‐dependent electrical properties have been used in electronic and optoelectronic devices,1–6 memory elements7–11 and various types of sensors 3, 12, 13. On the level of individual nanoobjects, these functions derive from and reflect the underlying molecular‐scale structural anisotropy (as in nanorods,14–16 nanowires,17, 18 or nanocubes) 19.…”

mentioning

confidence: 99%

Nanostructural Anisotropy Underlies Anisotropic Electrical Bistability

Pillai¹,

Pacławski²,

Kim³

et al. 2013

Advanced Materials

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Regular arrays of nanorods having asymmetric cross-sections are fabricated by a combination of electrodeposition and glancing-angle deposition (GLAD). When these nanorods are embedded in a polymer matrix, they give rise to composite materials in which the structural anisotropy at the nanoscale translates into functional anisotropy in the form of direction-dependent electrical bistability. The degree of this directional bistability depends on and can be controlled by the spacing between the nearby nanorods.

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“…A SWCNT SET was fabricated on top of the GaAs/AlGaAs 2DEG wafer [70]. In this case, the THz photons were absorbed by Landau levels formed in the 2DEG in high magnetic fields, and the SWCNT SET was used as an electrometer to detect local charge configurations.…”

Section: Quantum Thz Detectionmentioning

confidence: 99%

Quantum-Dot Devices with Carbon Nanotubes

Ishibashi

2015

Frontiers of Graphene and Carbon Nanotubes

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Carbon nanotubes (CNTs) are attractive building blocks for quantum dots because of their extremely small diameters. In this chapter, typical behaviors of the carbon nanotube quantum dots and their artificial atom features are discussed. Then, some applications to the quantum-dot devices are presented. Some challenges on the necessary technologies toward integrated quantum-dot devices are also described. IntroductionA quantum dot is a structure where electrons are confined in three dimensions and has been studied for functional device applications as well as for exploring interesting physics in nanoscale. The spacing between confined discrete energy levels (E) is a important energy scale associated with the quantum dot, which becomes large as the size of the quantum dot becomes small. In the surface-gated quantum dots formed at an interface between the GaAs/AlGaAs heterostructures, which have been widely used to study transport physics [1], a size of the dot is in a range of submicron. This is limited by the resolution of electron beam lithography, and the corresponding level spacing is of the order of 0.1 meV. Another important energy scale associated with the quantum dot is a charging energy of single electrons (E c D e 2 /C † : e is an elementary charge and C † is a self-capacitance of the dot). It is of the order of 1 meV for the lithographically defined quantum dots. With those energy scales, quantum confinement effects and single-electron effects are usually observable below 1 K. Therefore, it is natural to use carbon nanotubes as building blocks of the extremely small quantum dot to realize larger quantum effects and higher temperature operation of quantum-dot devices.

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Terahertz sensing with a carbon nanotube/two-dimensional electron gas hybrid transistor

Cited by 44 publications

References 19 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Nanostructural Anisotropy Underlies Anisotropic Electrical Bistability

Quantum-Dot Devices with Carbon Nanotubes

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