Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm

Chimot, N.; Mangeney, J.; Joulaud, Laurent; Crozat, P.; Bernas, H.; Blary, K.; Lampin, Jean‐François

doi:10.1063/1.2126110

Cited by 90 publications

(49 citation statements)

References 11 publications

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“…Only very few ions stay in the active layer of the device for the ion energies used. 78,79 This way, recombination times of 0.2-0.3 ps have been achieved. Under pulsed operation, 0.8 lW of total THz power could be extracted.…”

Section: Novel Materials For Photoconductorsmentioning

confidence: 95%

“…u ¼ 90 , the emission is perpendicular to the current direction and, hence, does not vanish at any angle h. The angular dependence of the intensity here stems only from the exponential interference term in Eq. (78). For q 0 =k 0:1 the intensity distributions differ only slightly from those of an ideal Hertzian dipole.…”

Section: Laes With Surface-parallel Electric Fieldmentioning

confidence: 96%

“…80 A resistivity of 5 Xcm 81 and a carrier mobility of 490 cm 2 =(Vs) were reported. 78 As a promising third method, embedded ErAs nanoparticles in standard InGaAs material can be used, in a similar manner as that described for GaAs. The difference in the lattice constant is now larger, as it was for the growth on GaAs.…”

Section: Novel Materials For Photoconductorsmentioning

confidence: 99%

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Tunable, continuous-wave Terahertz photomixer sources and applications

Preu

Döhler

Malzer

et al. 2011

Journal of Applied Physics

424

293

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Realization of gigahertz-frequency impedance matching circuits for nano-scale devices Appl. Phys. Lett. 101, 053108 (2012) Synchronization of a renewable energy inverter with the grid J. Renewable Sustainable Energy 4, 043103 (2012) Monolithic high-temperature superconducting heterodyne Josephson frequency down-converter Appl. Phys. Lett. 100, 262604 (2012) Generation of pure phase and amplitude-modulated signals at microwave frequencies Rev. Sci. Instrum. 83, 064705 (2012) Additional information on J. Appl. Phys. This review is focused on the latest developments in continuous-wave (CW) photomixing for Terahertz (THz) generation. The first part of the paper explains the limiting factors for operation at high frequencies $ 1 THz, namely transit time or lifetime roll-off, antenna (R)-device (C) RC rolloff, current screening and blocking, and heat dissipation. We will present various realizations of both photoconductive and p-i-n diode-based photomixers to overcome these limitations, including perspectives on novel materials for high-power photomixers operating at telecom wavelengths (1550 nm). In addition to the classical approach of feeding current originating from a small semiconductor photomixer device to an antenna (antenna-based emitter, AE), an antennaless approach in which the active area itself radiates (large area emitter, LAE) is discussed in detail. Although we focus on CW photomixing, we briefly discuss recent results for LAEs under pulsed conditions. Record power levels of 1.5 mW average power and conversion efficiencies as high as 2 Â 10 À3 have been reached, about 2 orders of magnitude higher than those obtained with CW antenna-based emitters. The second part of the paper is devoted to applications for CW photomixers. We begin with a discussion of the development of novel THz optics. Special attention is paid to experiments exploiting the long coherence length of CW photomixers for coherent emission and detection of THz arrays. The long coherence length comes with an unprecedented narrow linewidth. This is of particular interest for spectroscopic applications, the field in which THz research has perhaps the highest impact. We point out that CW spectroscopy systems may potentially be more compact, cheaper, and more accurate than conventional pulsed systems. These features are attributed to telecom-wavelength compatibility, to excellent frequency resolution, and to their huge spectral density. The paper concludes with prototype experiments of THz wireless LAN applications. For future telecommunication systems, the limited bandwidth of photodiodes is inadequate for further upshifting carrier frequencies. This, however, will soon be required for increased data throughput. The implementation of telecom-wavelength compatible photomixing diodes for down-conversion of an optical carrier signal to a (sub-)THz RF signal will be required.

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Section: Novel Materials For Photoconductorsmentioning

confidence: 95%

Section: Laes With Surface-parallel Electric Fieldmentioning

confidence: 96%

Section: Novel Materials For Photoconductorsmentioning

confidence: 99%

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Tunable, continuous-wave Terahertz photomixer sources and applications

Preu

Döhler

Malzer

et al. 2011

Journal of Applied Physics

424

293

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“…10,11 Another possibility is the implantation of Fe-or Br + -ions into InGaAs to achieve a higher resistivity. 12,13 Low-temperature growth of InGaAs with additional Be-doping also enhances the resistivity. 9,14 In this letter we present a terahertz emitter which overcomes the resistivity limit of previous photoconductive switches based on InGaAs.…”

mentioning

confidence: 99%

Photo-Dember terahertz emitter excited with an Er:fiber laser

Klatt

Surrer

Stephan

et al. 2011

Applied Physics Letters

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“…However, its narrow band gap (0.75 eV), mandatory to have interband absorption comes with a low dark resistivity (<200 Ω cm). [6][7][8][9][10][11] An alternative way consists in using the infrared absorption induced by the mid-gap level defects present in the LT-GaAs layers and/or by interband two photon absorption. Generation and detection of THz waves by LT-GaAs PCs, consisting of two metallic electrodes patterned on a ∼1 µm-thick LT-GaAs layer, pumped by 1.55-µm laser pulses (∼50 fs pulse width, ∼100 MHz repetition rate) were then reported, but with decreased performances, as compared with 780 nm laser pulses excitation, despite much higher optical peak powers.…”

mentioning

confidence: 99%

Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm

et al. 2016

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We show that photoconductors based on low-temperature-grown GaAs (LT-GaAs) can be efficiently operated by 1.55 μm telecom wavelength by using metallic mirror based optical cavities. Two different semi-transparent front mirrors are compared: the first one is a thin gold layer, whereas the second one consists of a gold grating. Light absorption in grating mirror based optical cavities is numerically, analytically, and experimentally investigated allowing for an appropriate optical design. We show a 3 times improvement of the LT-GaAs photoconductor photoresponse by using, as front mirror, the gold grating once compared with the thin gold layer. It reaches around 0.5 mA/W under continuous wave, whereas a transient photoresistivity (Ron) as low as 5 Ω is deduced from dc photocurrents measured under femtosecond pulsed laser excitation. This work paves the way to efficient and reliable optoelectronics systems for GHz or THz waves sampling driven by 1.55 μm pulsed lasers widely available.

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Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55μm

Cited by 90 publications

References 11 publications

Tunable, continuous-wave Terahertz photomixer sources and applications

Tunable, continuous-wave Terahertz photomixer sources and applications

Photo-Dember terahertz emitter excited with an Er:fiber laser

Resonant cavities for efficient LT-GaAs photoconductors operating at λ = 1550 nm

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