Abstract:We examine and compare the diagonal magnetoresistance, R xx , and the photo-voltage induced by microwave (42 ≤ f < 300GHz) and terahertz (f ≥ 300GHz) photoexcitation in the high mobility quasi two-dimensional GaAs/AlGaAs system. The data demonstrate strong radiation-induced magneto-resistance oscillations in R xx to 360GHz. In addition, cyclotron resonance is observed in the photo-voltage to 725GHz. These results show that our high mobility GaAs/AlGaAs 2DES specimens remain photo-active in magnetotransport int… Show more
“…In contrast 2 to previous research 5,6,24 , we originally observe a giant resonant peak and B-periodic oscillations. Our analysis indicates that the former comes from the bulk plasmon coupled with cyclotron resonance, and the latter are the consequence of the edge magnetoplasmon (EMP)…”
In our high mobility p-type AlGaAs/GaAs two-dimensional hole samples, we originally observe the B-periodic oscillation induced by microwave (MW) in photovoltage (PV) measurements. In the frequency range of our measurements (5 -40 GHz), the period (∆B) is inversely proportional to the microwave frequency (f ). The distinct oscillations come from the edge magnetoplasmon (EMP) in the high quality heavy hole system. Simultaneously, we observe the giant plasmon resonance signals in our measurements on the shallow two-dimensional hole system (2DHS).
“…In contrast 2 to previous research 5,6,24 , we originally observe a giant resonant peak and B-periodic oscillations. Our analysis indicates that the former comes from the bulk plasmon coupled with cyclotron resonance, and the latter are the consequence of the edge magnetoplasmon (EMP)…”
In our high mobility p-type AlGaAs/GaAs two-dimensional hole samples, we originally observe the B-periodic oscillation induced by microwave (MW) in photovoltage (PV) measurements. In the frequency range of our measurements (5 -40 GHz), the period (∆B) is inversely proportional to the microwave frequency (f ). The distinct oscillations come from the edge magnetoplasmon (EMP) in the high quality heavy hole system. Simultaneously, we observe the giant plasmon resonance signals in our measurements on the shallow two-dimensional hole system (2DHS).
“…Consequently, new materials have been studied [22][23][24][25] and new theoretical models have been put forward [26][27][28][29][30]. To the most pressing issues which need to be clarified experimentally and which might help to differentiate between the different models belong the MIRO polarization dependence [7,8,31] and the "bulk" or "edge" nature of the effect.So far the majority of experimental work has been done in the MW regime (1-350 GHz) and there are only a few reports on MIRO excited at terahertz (THz) frequencies [32][33][34]. Here we report on the observation of pronounced MIRO-like oscillations induced by THz radiation.…”
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confidence: 83%
“…So far the majority of experimental work has been done in the MW regime (1-350 GHz) and there are only a few reports on MIRO excited at terahertz (THz) frequencies [32][33][34]. Here we report on the observation of pronounced MIRO-like oscillations induced by THz radiation.…”
We report on the study of terahertz radiation-induced MIRO-like oscillations of magnetoresistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions-effect of radiation helicity and the role of the edges-yielding crucial information for an understanding of the MIRO (microwave-induced resistance oscillations) origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation. DOI: 10.1103/PhysRevB.94.081301 One of the most interesting phenomena recently observed in two-dimensional electron systems (2DES) is microwave (MW) -induced resistance oscillations (MIRO) and associated zero resistance states (ZRS) [1][2][3][4][5][6][7], reviewed, e.g., in [8]. Like Shubnikov-de Haas oscillations (SdH), MIRO are periodic on a 1/B scale, but occur at lower magnetic fields and show much weaker temperature dependence. Phenomenologically, they are very similar to Weiss oscillations [9], which reflect the commensurability between the cyclotron orbit radius and the period of a periodic potential. MIRO by contrast, reflect the commensurability between the MW photon energy 2π f and the cyclotron energy ω c . In extremely clean samples the minima of the MIRO develop into ZRS [3][4][5], which are explained [10] in terms of an instability of the system and formation of current domains, occurring when the conductivity becomes negative under MW irradiation (see also [8,11,12]).In spite of numerous experiments and significant advances in their theoretical understanding, there is still no commonly accepted microscopic description of the effect [13,14] and the ongoing MIRO investigations remain challenging [15][16][17][18][19][20][21]. Consequently, new materials have been studied [22][23][24][25] and new theoretical models have been put forward [26][27][28][29][30]. To the most pressing issues which need to be clarified experimentally and which might help to differentiate between the different models belong the MIRO polarization dependence [7,8,31] and the "bulk" or "edge" nature of the effect.So far the majority of experimental work has been done in the MW regime (1-350 GHz) and there are only a few reports on MIRO excited at terahertz (THz) frequencies [32][33][34]. Here we report on the observation of pronounced MIRO-like oscillations induced by THz radiation. We exploit the specific advantages of THz laser radiation not present in the MW regime, i.e., the possibility to focus it onto a spot smaller than the sample's size and easy control of the radiation's polarization. The most important features clearly detected on a large variety of samples are (i) a very weak dependence of the oscillations' amplitude on the photon helicity and (ii) the bulk nature of the effect. Furthermore, our study shows that the MIRO oscillations can be excited at THz frequencies even in the samples with low mobility, whereas in the MW range ultrahigh mobility samples are crucially needed for this type of experimen...
“…The huge photo-induced modulation of the dark magnetoresistance in this special photo-response of the 2DES yields potential applications in microwave and terahertz wave sensing. 3 The amplitude of the radiation-induced magnetoresistance oscillations (RiMOs) depends on factors such as radiation frequency [4][5][6] ; temperature 7 , radiation power 8 , linear polarization direction 9,10 , angle between magnetic field and sample normal 11 and current through sample 12 . All these factors have been examined both experimentally [13][14][15][16][17][18][19][20][21][22][23] and theoretically .…”
We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. Diagonal resistance R xx was measured at fixed magnetic fields corresponding to the photo-excited oscillatory extrema of R xx as a function of both the microwave power, P , and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the R xx versus θ line shape with increasing microwave power. We report that the non-linear power dependence of the amplitude of the radiation-induced magnetoresistance oscillations distorts the cosine-square relation between R xx and θ at high power.
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