Abstract:We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. Diagonal resistance R xx was measured at fixed magnetic fields corresponding to the photo-excited oscillatory extrema of R xx as a function of both the microwave power, P , and the linear polarization angle, θ. Color contour plots of such measurements demonstrate the evolution of the R … Show more
“…1,5 At lower temperatures, moderate microwave intensity transforms the oscillatory minima into zero-resistance states. Interesting experimental features examined by experiment include the 1/4 cycle phase shift 1,5,8 , the non-linear increase in the amplitude of the radiation-induced oscillations with the microwave power 19,55 , observed correlations between the magnetoresistance oscillations and microwave reflection 8,25 from the 2DES, polarization sensitivity, 22,28,29,31 , and magnetoresistive response under bichromatic excitation. 10,42 .…”
We examined the influence of microwave radiation on both the amplitude of Shubnikov-de Haas (SdH) oscillations and the null field longitudinal magnetoresistance at liquid helium temperatures, in GaAs/AlGaAs Hall bar devices. Microwave radiation over the frequency range 25 ≤ f ≤ 50 GHz with source power 0 ≤ P ≤ 4 mW served to photo-excite the high mobility (10 7 cm 2 /V s) 2D electron system (2DES) as magnetoresistance traces were obtained as a function of the microwave power P and temperature T. Lineshape study of SdH oscillations has been carried out over the span 2.3 < ωc/ω ≤ 5.2, where ωc = eB/m * , ω = 2πf , B is the magnetic field, m * is the effective mass and f is the microwave frequency. Here, fits of the SdH lineshape served to determine the electron temperature (Te) as a function of P and T. Theory has proposed that, in the ωc/ω ≥ 1 regime, both the electron temperature and radiation energy absorption rate (Sp) exhibit relatively small response, while in the ωc/ω ≤ 1 regime, both Te and Sp are enhanced and exhibit oscillatory behavior. We compare the experimental results with these theoretical predictions, and comment upon relative role of electron heating in the microwave photo-excited high mobility 2DES.
“…1,5 At lower temperatures, moderate microwave intensity transforms the oscillatory minima into zero-resistance states. Interesting experimental features examined by experiment include the 1/4 cycle phase shift 1,5,8 , the non-linear increase in the amplitude of the radiation-induced oscillations with the microwave power 19,55 , observed correlations between the magnetoresistance oscillations and microwave reflection 8,25 from the 2DES, polarization sensitivity, 22,28,29,31 , and magnetoresistive response under bichromatic excitation. 10,42 .…”
We examined the influence of microwave radiation on both the amplitude of Shubnikov-de Haas (SdH) oscillations and the null field longitudinal magnetoresistance at liquid helium temperatures, in GaAs/AlGaAs Hall bar devices. Microwave radiation over the frequency range 25 ≤ f ≤ 50 GHz with source power 0 ≤ P ≤ 4 mW served to photo-excite the high mobility (10 7 cm 2 /V s) 2D electron system (2DES) as magnetoresistance traces were obtained as a function of the microwave power P and temperature T. Lineshape study of SdH oscillations has been carried out over the span 2.3 < ωc/ω ≤ 5.2, where ωc = eB/m * , ω = 2πf , B is the magnetic field, m * is the effective mass and f is the microwave frequency. Here, fits of the SdH lineshape served to determine the electron temperature (Te) as a function of P and T. Theory has proposed that, in the ωc/ω ≥ 1 regime, both the electron temperature and radiation energy absorption rate (Sp) exhibit relatively small response, while in the ωc/ω ≤ 1 regime, both Te and Sp are enhanced and exhibit oscillatory behavior. We compare the experimental results with these theoretical predictions, and comment upon relative role of electron heating in the microwave photo-excited high mobility 2DES.
“…Interesting experimental features revealed by prior studies in this field include: (a) the 1/4-cycle phase shift ref. 3 , 4 , (b) the non-linear increase in the amplitude of the radiation-induced oscillations with the microwave power 5 , (c) the sinusoidal dependence of the oscillation amplitude on the linear polarization angle 6 7 , (d) observed correlations between the magneto-resistance oscillations and the microwave reflection from 2DES 8 9 , and other fascinating phenomena 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 .…”
A comparative study of the radiation-induced magnetoresistance oscillations in the
high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES)
under linearly- and circularly- polarized microwave excitation indicates a profound
difference in the response observed upon rotating the microwave launcher for the two
cases, although circularly polarized microwave radiation induced magnetoresistance
oscillations observed at low magnetic fields are similar to the oscillations
observed with linearly polarized radiation. For the linearly polarized radiation,
the magnetoresistive response is a strong sinusoidal function of the launcher
rotation (or linear polarization) angle, θ. For circularly
polarized radiation, the oscillatory magnetoresistive response is hardly sensitive
to θ.
“…Transport at large filling factors have been a topic of interest, especially the microwave,-millimeter wave,-and terahertz,-radiation-induced zero-resistance states, 1,2 and the associated 1/4-cycle phase shifted radiation-induced magnetoresistance oscillations, 1,3,4,8,9,12,15,17,19,21,25 which refers to the B −1 -periodic oscillatory variation in the magnetoresistance observed under photoexcitation in the 2D electron system under the influence of a transverse magnetic field, B. Such oscillations exhibit a non-linear variation in the oscillatory amplitude with radiation power, 15,25,36 sensitivity in the oscillatory amplitude to the orientation of the linearly polarized radiation with respect to the device, 19,[25][26][27][28]35 etc. Many theoretical explanations have been proposed to help understand associated phenomena, [36][37][38][39][40][41][42][43][45][46][47][48][49][50][51][53][54][55][56][57][58][59]…”
Millimeter wave radiation-induced magneto-resistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, Rxx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed Rxx response, as the higher frequency millimeter wave component determines the Rxx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.
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