Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Kanaya, Haruichi; Suzuki, Safumi; Asada, Masahiro

doi:10.1587/elex.10.20130501

Cited by 11 publications

(6 citation statements)

References 22 publications

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“…From this value the characteristic impedance of the resonator is calculated to be 12 Ω, which is defined as √ (𝐿/𝐶). This small impedance value ensures harmonic oscillation [23], and it is similar to those calculated from the parameters reported for THz oscillators [24], [25]. A softtype oscillator having a parallel stabilizing resistor of 5Ω in place of the series resistor was also fabricated with the same parameters for comparison.…”

Section: Hard-type Oscillator Circuitsupporting

confidence: 74%

Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator

Maezawa

Itö

Mori

2021

IEICE Trans. Electron.

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A hard-type oscillator is defined as an oscillator having stable fixed points within a stable limit cycle. For resonant tunneling diode (RTD) oscillators, using hard-type configuration has a significant advantage that it can suppress spurious oscillations in a bias line. We have fabricated hard-type oscillators using an InGaAs-based RTD, and demonstrated a proper operation. Furthermore, the oscillating properties have been compared with a soft-type oscillator having a same parameters. It has been demonstrated that the same level of the phase noise can be obtained with a much smaller power consumption of approximately 1/20.

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Section: Hard-type Oscillator Circuitsupporting

confidence: 74%

Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator

Maezawa

Itö

Mori

2021

IEICE Trans. Electron.

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“…The ohmic contacts are heavily doped to reduce the diode's series resistance. The first resonant energy level can be significantly lowered due to the indium-rich quantum well [6]. Thus, at low voltage bias, a peak current is possible.…”

Section: Structure and Characteristics Of The Rtdmentioning

confidence: 99%

Developoment of 100 GHz resonant tunnelling diodes based oscillator

AlQurashi¹,

sexton²,

Missous³

2022

Preprint

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In this work, the physical and electromagnetic modelling of a double barriers InGaAs/AlAs resonant tunnelling diode (RTD) oscillator was performed using a 4 μm2 mesa area diode with a peak current density of 3.3 mA/μm2 integrated with a coplanar waveguide resonator. A 100 GHz oscillator was realized with an output power of 83 μW by utilizing the diode's negative differential resistance feature. The equivalent circuit model of the diode was extracted using a fitting model for the RTD's measured I-V characteristics. Advanced design system (ADS) software was used to model the circuits. To ensure the circuit's performance at 100 GHz, all parasitic elements associated with the passive components were considered and modelled. Additionally, the stabilizing resistance's effect on the extracted power was discussed.

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“…We also note that whilst the influence of interface roughness on the linewidth of infinitely deep QWs increases monotonically for decreasing well-width, and becomes infinite in the limit of zero-width limit; the interface roughness effect for QWs of finite depth reaches a maximum and then decreases to zero in the zero-width limit due to the increasing penetration of the excitonic wave function into the barriers. As the localisation effect of the electron is reduced in the thin QW, the electron dwell time is consequently reduced, which is effective for high frequency performance [48].…”

Section: Well-width Dependent Luminescence Characteristicsmentioning

confidence: 99%

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Jacobs

Stevens

Hogg

2016

IEICE Trans. Electron.

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SUMMARYHigh structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current density InGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n + InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n + InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

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Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

Cited by 11 publications

References 22 publications

Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator

Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator

Developoment of 100 GHz resonant tunnelling diodes based oscillator

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

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