Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Hillger, Philipp; Grzyb, Janusz; Jain, Ritesh; Pfeiffer, Ullrich R.

doi:10.1109/tthz.2018.2884852

Cited by 294 publications

(130 citation statements)

References 136 publications

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“…is the measured noise spectra density of the device using Agilent 35670a. As can be seen, the lowest NEP of the detector at room temperature is at the level 200 pW/Hz 0.5 , which is within the availability NEP range from 10 −10 −10 −12 W/Hz 0.5 of nowadays room temperature terahertz FET detectors [25]- [26]. These measured results suggest that our proposed antenna can be well suited into the terahertz room temperature CMOS detector.…”

Section: Resultssupporting

confidence: 65%

Resonant Polysilicon Antenna for Terahertz Detection

Shen

Liao

et al. 2019

IEEE Photonics J.

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Resonant antennas have garnered considerable interest in terahertz and visible regimes owing to its extraordinary localized field concentration capability. In this work, we experimentally demonstrate a novel metal-free terahertz detector, which is fashioned by heavily doped polysilicon using standard CMOS process. The computational results show that the incident field can be largely enhanced within the antenna gap area at the resonance of 650 GHz. The room temperature measured results show that the responsivity and noise equivalence power of the detector integrated with the optimized antenna design is 600 V/W and 200 pW/Hz 0.5 at 650 GHz, respectively. Aided by an equivalent circuit model, theoretical analysis is carried out to elucidate that the field enhancement ratio of the resonant polysilicon antenna is comparable to gold made antenna at terahertz frequencies. Our study provides a new approach for designing a low-cost and CMOS-compatible terahertz detector characterized with strongly localized field, projecting more insights on light-matter interaction at terahertz frequencies.

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Section: Resultssupporting

confidence: 65%

Resonant Polysilicon Antenna for Terahertz Detection

Shen

Liao

et al. 2019

IEEE Photonics J.

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“…Over the past few decades, various terahertz (THz) technologies have been developed rapidly. Among them, THz imaging and sensing technology have broad application prospects in science and other fields, such as safety and security screening, process monitoring, non-contact material testing, radio astronomy, and earth observation [1][2][3][4][5][6][7][8][9]. In recent years, many active or passive imaging systems based on all-solid-state electronics technology have been reported at the submillimeter and THz band [9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

et al. 2020

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

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“…These properties make them attractive for a variety of applications, including material identification [ 1 , 2 ], material characterization [ 3 , 4 ], and imaging [ 5 , 6 ]. However, while electronic terahertz systems already exhibit a high degree of integration [ 7 , 8 ], their instantaneous bandwidths have yet failed to exceed a few tens of GHz. Photonic, i.e., laser-driven, terahertz time-domain spectroscopy (THz TDS) systems on the other hand can already provide a few THz of bandwidth at the cost of a low degree of integration and high system complexity.…”

Section: Introductionmentioning

confidence: 99%

Wideband Beam Steering Concept for Terahertz Time-Domain Spectroscopy: Theoretical Considerations

Kolpatzeck

Haring

et al. 2020

Sensors

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Photonic true time delay beam steering on the transmitter side of terahertz time-domain spectroscopy (THz TDS) systems requires many wideband variable optical delay elements and an array of coherently driven emitters operating over a huge bandwidth. We propose driving the THz TDS system with a monolithic mode-locked laser diode (MLLD). This allows us to use integrated optical ring resonators (ORRs) whose periodic group delay spectra are aligned with the spectrum of the MLLD as variable optical delay elements. We show by simulation that a tuning range equal to one round-trip time of the MLLD is sufficient for beam steering to any elevation angle and that the loss introduced by the ORR is less than 0.1 dB. We find that the free spectral ranges (FSRs) of the ORR and the MLLD need to be matched to 0.01 % so that the pulse is not significantly broadened by third-order dispersion. Furthermore, the MLLD needs to be frequency-stabilized to about 100 MHz to prevent significant phase errors in the terahertz signal. We compare different element distributions for the array and show that a distribution according to a Golomb ruler offers both reasonable directivity and no grating lobes from 50 GHz to 1 THz.

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Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Cited by 294 publications

References 136 publications

Resonant Polysilicon Antenna for Terahertz Detection

Resonant Polysilicon Antenna for Terahertz Detection

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Wideband Beam Steering Concept for Terahertz Time-Domain Spectroscopy: Theoretical Considerations

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