Terahertz generation in mid-infrared quantum cascade lasers with a dual-upper-state active region

Fujita, Kazuue; Hitaka, Masahiro; Ito, Akio; Edamura, Tadataka; Yamanishi, Masamichi; Jung, Seungyong; Belkin, Mikhail

doi:10.1063/1.4923203

Cited by 58 publications

(33 citation statements)

References 23 publications

(66 reference statements)

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“…Для генерации на РЧ, во-первых, необходимы высокие выходные оптические мощности излучения на частотах f 1 и f 2 в среднем ИК-диапазоне, а также повышенная величина нелинейной восприимчи-вости второго порядка (χ (2) ) [18,19]. Повышение коэффи-циента χ (2) возможно за счет уменьшения толщины вы-ходного барьера-инжектора [18] в конструкции активной области с двухфононной релаксацией электронов [20], а также путем применения конструкций активной области на основе однофононного опустошения нижнего уров-ня [18], переходов " связанное состояние -непрерывный спектр" [21], с двумя верхними уровнями [22].…”

Section: Introductionunclassified

Гетероструктуры Одночастотных И Двухчастотных Квантово-Каскадных Лазеров

Бабичев¹,

Курочкин²,

Колодезный³

et al. 2018

Физика И Техника Полупроводников

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The results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.

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Section: Introductionunclassified

Гетероструктуры Одночастотных И Двухчастотных Квантово-Каскадных Лазеров

Бабичев¹,

Курочкин²,

Колодезный³

et al. 2018

Физика И Техника Полупроводников

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“…Several types of semiconductor-based devices such as quantum cascade lasers (QCLs) [6]- [8], resonant tunneling diodes (RTDs) [9], [10], and photomixers [11], [12] have also been studied and developed for continuous-wave (cw) terahertz emitter. Terahertz sources based on intracavity differencefrequency generation (DFG) in dual wavelength midinfrared QCLs have also been recently reported [13], [14]. However, there are still challenges associated with each of these devices.…”

Section: Introductionmentioning

confidence: 99%

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

Kitada

Ota

et al. 2017

IEICE Trans. Electron.

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SUMMARYCompact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity modes with an optical frequency difference in the terahertz region are realized since two cavities are coupled by the intermediate DBR multilayer. In the proposed device, one cavity is used as the active layer for two-color lasing in the near-infrared region by current injection and the other is used as the second-order nonlinear optical medium for difference-frequency generation of the two-color fundamental laser light. The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. In this study, two-color emission by optical excitation was measured for the waferbonded GaAs/AlGaAs coupled multilayer cavity containing self-assembled InAs quantum dots (QDs). We found that optical loss at the bonding interface strongly affects the two-color emission characteristics when the bonding was performed in the middle of the intermediate DBR multilayer. The effect was almost eliminated when the bonding position was carefully chosen by considering electric field distributions of the two modes. We also fabricated the current-injection type devices using the wafer-bonded coupled multilayer cavities. An assemble of self-assembled QDs is considered to be desirable as the optical gain medium because of the discrete nature of the electronic states and the relatively wide gain spectrum due to the inhomogeneous size distribution. The gain was, however, insufficient for two-color lasing even when the nine QD layers were used. Substituting two types of InGaAs multiple quantum wells (MQWs) for the QDs, we were able to demonstrate two-color lasing of the device when the gain peaks of MQWs were tuned to the cavity modes by lowering the operating temperature.

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“…Recently, intracavity difference-frequency generation (DFG) in dual-wavelength mid-infrared QCLs has been demonstrated as a THz source. 13,14) We have proposed a GaAs=AlAs coupled multilayer cavity structure for compact and room-temperature operable THz emitting devices. 15) The structure is composed of two equivalent cavity layers and three distributed Bragg reflector (DBR) multilayers.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

Kitada

Minami

et al. 2018

Jpn. J. Appl. Phys.

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Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial wafers with (001) and (113)B orientations and they were directly bonded to form the coupled multilayer cavity. The (001) side cavity contains two types of InGaAs multiple quantum wells to realize optical gain for two-color lasing while a single GaAs layer of the (113)B side cavity is a nonlinear medium for efficient DFG. Lasing behavior was clearly observed for two modes under pulsed current conditions at room temperature. We found that the intensity relation between two-color lasings was dependent on the pulse duration because of the different temporal profiles of emission intensity. Simultaneous twocolor lasing in the device was also confirmed by measuring the sum-frequency generation signal using a beta barium borate crystal.

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Terahertz generation in mid-infrared quantum cascade lasers with a dual-upper-state active region

Cited by 58 publications

References 23 publications

Гетероструктуры Одночастотных И Двухчастотных Квантово-Каскадных Лазеров

Гетероструктуры Одночастотных И Двухчастотных Квантово-Каскадных Лазеров

Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

Room-temperature two-color lasing by current injection into a GaAs/AlGaAs coupled multilayer cavity fabricated by wafer bonding

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