Terahertz GaAs/AlAs quantum-cascade lasers

Schrottke, L.; Lü, Xiang; Rozas, G.; Biermann, K.; Grahn, H. T.

doi:10.1063/1.4943657

Cited by 46 publications

(41 citation statements)

References 33 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Figure 1(e) depicts the experimental setup using a THz QCL in G-TAWB operation as a source for a Fourier transform infrared (FTIR) spectrometer. The employed GaAs/AlAs QCL was fabricated from the same wafer as the QCL with the lower doping density in [25]. The QCL with a single-plasmon waveguide has a width of 120 µm and a length of about 3 mm.…”

Section: Principle and Setupmentioning

confidence: 99%

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy

Röben¹,

Lü²,

Hempel³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

Terahertz (THz) quantum-cascade lasers (QCLs) are powerful radiation sources for high-resolution and high-sensitivity spectroscopy with a discrete spectrum between 2 and 5 THz as well as a continuous coverage of several GHz. However, for many applications, a radiation source with a continuous coverage of a substantially larger frequency range is required. We employed a multi-mode THz QCL operated with a fast ramped injection current, which leads to a collective tuning of equally-spaced Fabry-Pérot laser modes exceeding their separation. A continuous coverage over 72 GHz at about 4.7 THz was achieved. We demonstrate that the QCL is superior to conventional sources used in Fourier transform infrared spectroscopy in terms of the signal-to-noise ratio as well as the dynamic range by one to two orders of magnitude. Our results pave the way for versatile THz spectroscopic systems with unprecedented resolution and sensitivity across a wide frequency range.

show abstract

Section: Principle and Setupmentioning

confidence: 99%

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy

Röben¹,

Lü²,

Hempel³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Some improvements have been obtained by using higher barriers with large Al content for mid‐infrared (mid‐IR) and pure AlAs for THz QCLs . The higher barrier structure had also been used in the early stages of a THz QCL design but there was some difficulty in designing the emission layers.…”

Section: Introductionmentioning

confidence: 99%

Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz

Lin

Hasegawa

2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

THz (QCLs) are promising large output power semiconductor-based THz sources with narrow bandwidths and wide operating frequency ranges. However, the operating temperature of THz QCLs is still limited by the design of its active region. Matyas et al. (2012) theoretically predicted that AlGaAs/GaAs THz QCLs with higher optical gain could be obtained by introducing a variable barrier height structure (Matyas et al., J. Appl. Phys. 2012, 111, 103106). Based on the proposed variable barrier QC structure, we fabricate AlGaAs/GaAs three-well type THz QCLs with an additional very thin second extraction barrier and a low barrier height emission barrier. With this device, we obtain lasing operation at 3.7 THz at a maximum operating temperature of 145 K. status solidi physica a www.advancedsciencenews.com www.pss-a.com

show abstract

“…Actually, the study of electron tunneling processes in planar semiconductor multilayer resonant tunneling structures (RTS) occupies an important place for an effective work of modern quantum cascade lasers (QCL) [1][2][3] and detectors (QCD). Much attention is paid to the theoretical study of interaction of electrons with optical phonons [4], constant electric [5,6] and magnetic field [7] with the electron beam and its static and dynamic spatial charge [8,9], but the acoustic phonons influence on the resonant tunneling is still practically unexplored.…”

Section: Introductionmentioning

confidence: 99%

The Spectrum of Transverse Acoustic Phonons in Planar Multilayer Semiconductor Nanostructures

Boyko¹,

Gryschuk²

2016

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

Based on the elastic continuum model, the theory of displacement of acoustic phonons spectra, arising in flat semiconductor nanostructures, was developed. For the studied resonant tunneling structure, which can be an active element of a quantum cascade laser or detector, the spectrum of acoustic phonons modes has been calculated. The dependences of the acoustic phonon spectrum from geometric parameters of studied nanostructure were set. The results obtained in the paper can be used to further theoretical studies of the electrons interaction with the transverse acoustic phonons in multilayer semiconductor nanosystems.

show abstract

Terahertz GaAs/AlAs quantum-cascade lasers

Cited by 46 publications

References 33 publications

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy

Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz

The Spectrum of Transverse Acoustic Phonons in Planar Multilayer Semiconductor Nanostructures

Contact Info

Product

Resources

About