2017
DOI: 10.1007/s10762-017-0452-4
|View full text |Cite
|
Sign up to set email alerts
|

Terahertz Focusing and Polarization Control in Large-Area Bias-Free Semiconductor Emitters

Abstract: We show that, when large-area multiplex terahertz semiconductor emitters, that work on diffusion currents and Schottky potentials, are illuminated by ultrashort optical pulses they can radiate a directional electromagnetic terahertz pulse which is controlled by the angular spectrum of the incident optical beam. Using the lens that focuses the incident near-infrared pulse, we have demonstrated THz emission focusing in free space, at the same point where the optical radiation would focus. We investigated the bea… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 39 publications
0
1
0
Order By: Relevance
“…Hence, a nano‐torus with a major radius of R=150 nm is exposed to 9% of the peak amplitude of Afalse∥false(r,tfalse). Such a tight focusing is possible for azimuthally and radially polarized vector beams . Typical photon energies are around ω=2.5 meV resulting in a Rayleigh length zR=102 nm in the GaAs host material.…”
Section: Quantitative Results Modeling and Analysismentioning
confidence: 99%
“…Hence, a nano‐torus with a major radius of R=150 nm is exposed to 9% of the peak amplitude of Afalse∥false(r,tfalse). Such a tight focusing is possible for azimuthally and radially polarized vector beams . Typical photon energies are around ω=2.5 meV resulting in a Rayleigh length zR=102 nm in the GaAs host material.…”
Section: Quantitative Results Modeling and Analysismentioning
confidence: 99%