Fabrication and Characterization of an 8 × 8 Terahertz Photoconductive Antenna Array for Spatially Resolved Time Domain Spectroscopy and Imaging Applications

Henri, R.; Nallappan, Kathirvel; Пономарев, Д. С.; Guerboukha, Hichem; Lavrukhin, D. V.; Yachmenev, A. E.; Хабибуллин, Р. А.; Skorobogatiy, Maksim

doi:10.1109/access.2021.3106227

Cited by 16 publications

(2 citation statements)

References 57 publications

(44 reference statements)

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“…The state-of-the-art THz detectors are based on plasmonic high-electron mobility transistors [7,8], photoconductive THz antennas [9][10][11][12] and quantum-well (QW)-, dot-, wire-, and ring-structures [13][14][15]. The superconductor-based detectors exhibit an outstanding performance at very low temperatures [16,17].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review

Yachmenev¹,

Хабибуллин²,

Пономарев³

2022

J. Phys. D: Appl. Phys.

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Beginning from the 1990s, an ever-lasting interest in the THz spectroscopy and THz instruments has produced wide progress in the development of high-speed THz detectors. The constantly growing requirements aimed at the increase of spectral resolution, sensitivity, and acquisition rate of THz detectors have attracted much attention in this field till nowadays. In the present review, we summarize the most recent advances in the THz photodetectors based on semiconductor structures with quantum confinement of an electron gas. Their main advantages over existing detectors are fast response time, increased spectral resolution, and multicolor operation thanks to the variability of their designs and band structure engineering. These all allow using them in various important applications as single photon detection, THz heterodyne detection, continuous monitoring of toxic gases, THz free space communications, and radio astronomy, as well.

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Section: Introductionmentioning

confidence: 99%

Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review

Yachmenev¹,

Хабибуллин²,

Пономарев³

2022

J. Phys. D: Appl. Phys.

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“…В качестве фотопроводящей подложки использовался слой LT-GaAs (LT, low-temperature grown GaAs -слой GaAs, выращенный методом ВВЕДЕНИЕ В настоящее время оптико-терагерцовые преобразователи (ОТП) широко используются в системах терагерцовой (ТГц) спектроскопии для генерации и детектирования широкополосного ТГц-излучения [1]. Благодаря «гибкости» в технологии их изготовления (возможности вариации топологии и геометрии электродов антенны, а также выбора фотопроводящего (полупроводникового) материала), ОТП представляют значительный интерес для создания систем одноканального и многоканального детектирования для визуализации (имиджинга) объектов в ТГц-диапазоне [2,3].…”

Section: моделированиеunclassified

Improving the efficiency of an optical-to-terahertz converter using sapphire fibers

Zenchenko

Lavrukhin

Glinskiy

et al. 2023

Rossijskij tehnologičeskij žurnal

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Objectives. The study aims to improve the efficiency of a large-area photoconductive terahertz (THz) emitter based on an optical-to-terahertz converter (OTC) having a radiating area of 0.3 × 0.3 mm2 for generating high-power THz radiation by using an array of close-packed profiled sapphire fibers having a diameter in the range of 100–300 μm as focusing optics.Methods. As a photoconductive substrate, we used a semi-infinite LT-GaAs layer (low-temperature grown GaAs; GaAs layer grown by molecular beam epitaxy at a low growth temperature). Additional Si3N4 and Al2O3 layers are intended for reducing leakage currents in the OTC and reducing the reflection of the laser pump pulse from the air/semiconductor interface (Fresnel losses), respectively, at a gap width of 10 μm. For forming the antenna electrodes and feed strips, the Ti/Au metal system was used. The simulation was carried out by the finite element method in the COMSOL Multiphysics environment.Results. The use of a profiled sapphire fiber whose diameter has been optimized with respect to the gap parameters to significantly increase the concentration of charge carriers in the immediate vicinity of the electrodes of an OTC is demonstrated. The integrated efficiency of a large-area photoconductive THz emitter was determined taking into account the microstrip topology of the array with a characteristic size of feed strips proportional to the gap width in the OTC and with the upper (masking) metal layer. The maximum localization of the electromagnetic field in close proximity to the edges of electrodes at the “fiber–semiconductor” interface is achieved with a profiled sapphire fiber diameter of 220 μm.Conclusions. By optimizing the diameter of the sapphire fiber, the possibility of improving the localization of incident electromagnetic waves in close proximity to the edges of the OTC electrodes by ~40 times compared to the case without fiber, as well as increasing the overall efficiency of a large-area emitter by up to ~7–10 times, was demonstrated.

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Terahertz solid immersion microscopy: Recent achievements and challenges

Chernomyrdin

Skorobogatiy

Пономарев

et al. 2022

Applied Physics Letters

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Unique effects of terahertz (THz)-wave–matter interaction push rapid progress in THz optoelectronics aimed at bridging the problematic THz gap. However, majority of modern methods of THz spectroscopy and imaging are still hampered by low spatial resolution. Common lens/mirror-based THz optics fails to overcome the Abbe barrier and usually provides resolution larger than a free-space wavelength λ (i.e., hundreds of micrometers or even few millimeters). To mitigate this difficulty, supperresolution THz imaging modalities were introduced recently, among which we particularly underline different methods of THz scanning-probe near-field microscopy. They not only rely on strong light confinement on sub-wavelength probes and provide resolution down to [Formula: see text]–[Formula: see text] but also suffer from small energy efficiency or presume an interplay among imaging resolution, signal-to-noise ratio, and performance. In this paper, we consider reflection-mode THz solid immersion (SI) microscopy that offers some compromise between the high imaging resolution of [Formula: see text] and high energy efficiency, which is due to the absence of any subwavelength probe in an optical scheme. Recent achievements, challenging problems, and prospects of SI microscopy are overviewed with an emphasis on resolving the inverse problem and applications in THz biophotonics.

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Fabrication and Characterization of an 8 × 8 Terahertz Photoconductive Antenna Array for Spatially Resolved Time Domain Spectroscopy and Imaging Applications

Cited by 16 publications

References 57 publications

Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review

Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review

Improving the efficiency of an optical-to-terahertz converter using sapphire fibers

Terahertz solid immersion microscopy: Recent achievements and challenges

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